Seller: CONTINENTAL MEDIA & BEYOND, Ocala, FL, U.S.A.
Condition: Used: Good. 1986 hardcover no dj as issued xlibrary copy withdrawn stamp on edge of pages/ in book clean text has book plate and card pocket out of print scarce title 222 pages::: I-18.
Hardcover. Condition: Near Fine. No Jacket. Inside front and back cover there is some fading. The text and the outside cover is unaffected. Otherwise the book is new. This book is hardcover!
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Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: Rarewaves.com USA, London, LONDO, United Kingdom
Paperback. Condition: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Language: English
Published by World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: GreatBookPrices, Columbia, MD, U.S.A.
Condition: New.
Language: English
Published by World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: GreatBookPrices, Columbia, MD, U.S.A.
Condition: As New. Unread book in perfect condition.
Language: English
Published by World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: California Books, Miami, FL, U.S.A.
Condition: New.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: Rarewaves USA, OSWEGO, IL, U.S.A.
Paperback. Condition: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Published by Library stamps/marks on first free endpapers and titelpage. Text clean. World Scientific.
Seller: Antiquariaat Ovidius, Bredevoort, Netherlands
Condition: Gebraucht / Used. 1986. Hardcover. xv,222pp.
Language: English
Published by World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Condition: As New. Unread book in perfect condition.
Language: English
Published by World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Condition: New.
Language: English
Published by World Scientific Pub Co Inc, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: Revaluation Books, Exeter, United Kingdom
Paperback. Condition: Brand New. 238 pages. 8.58x5.91x0.55 inches. In Stock.
Condition: As New. Unread book in perfect condition.
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Condition: New.
Seller: Ria Christie Collections, Uxbridge, United Kingdom
£ 76.61
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Add to basketCondition: New. In.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: Rarewaves USA United, OSWEGO, IL, U.S.A.
Paperback. Condition: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Condition: As New. Unread book in perfect condition.
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Condition: New.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: Rarewaves.com UK, London, United Kingdom
Paperback. Condition: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Paperback. Condition: Brand New. 238 pages. 9.00x6.50x0.75 inches. In Stock.
Language: English
Published by WORLD SCIENTIFIC PUB CO INC, 1987
ISBN 10: 9971501422 ISBN 13: 9789971501426
Seller: Buchpark, Trebbin, Germany
Condition: Gut. Zustand: Gut | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.
Language: English
Published by WORLD SCIENTIFIC PUB CO INC, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: moluna, Greven, Germany
Kartoniert / Broschiert. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Klappentext.
Language: English
Published by WORLD SCIENTIFIC PUB CO INC, 1987
ISBN 10: 9971501422 ISBN 13: 9789971501426
Seller: moluna, Greven, Germany
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt.