This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.

"About this title" may belong to another edition of this title.

Store Description

We have 20 years experience selling books worldwide! Friendly customer support. Your satisfaction guaranteed!

Visit Seller's Storefront

Seller's business information

Miramar International Services LLC

Sale & Shipping Terms

Terms of Sale

www.californiabooks.com

Right of cancellation

Shipping Terms

www.californiabooks.com

Shipping rates from U.S.A. to United Kingdom

Shipping rates from U.S.A. to United Kingdom
Order quantity	12 to 18 business days	5 to 8 business days
First item	� 7.35	� 36.76

Delivery times are set by sellers and vary by carrier and location. Orders passing through Customs may face delays and buyers are responsible for any associated duties or fees. Sellers may contact you regarding additional charges to cover any increased costs to ship your items.