Impact Spacer Engineering Performance by Kaur Prabhjot (6 results)

Condition: Sehr gut. Zustand: Sehr gut | Seiten: 88 | Sprache: Englisch | Produktart: Bücher.

Condition: Hervorragend. Zustand: Hervorragend | Seiten: 88 | Sprache: Englisch | Produktart: Bücher.

Taschenbuch. Condition: Neu. Neuware -The scaling of traditional planar CMOS devices is becoming difficult due to increasing gate leakage and subthreshold leakage. Multigate FETs have been proposed to overcome the limitations associated with the scaling of traditional CMOS devices below 100nm region. The multiple electrically coupled gates and the thin silicon body suppress the short-channel effects, thereby lowering the subthreshold leakage current in a multi-gate MOSFET. However, fabrication complexity increases for inversion mode (IM) FinFET devices due to ultra-steep doping profiles requirement. Junctionless transistor (JLT) overcomes the limitations associated with the creation of ultra-steep doping profiles during fabrication and short channel effects. In order to further reduce the SCEs, spacers at the both sides of gate are used that minimizes the leakage current. In this proposed work, JLT is designed with the use of spacer engineering i.e. changing the Lext, spacer¿s proportion as well as the dielectric values (¿) of spacer material and its performance are evaluated from device characteristics using TCAD software tool.Books on Demand GmbH, Überseering 33, 22297 Hamburg 88 pp. Englisch.

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The scaling of traditional planar CMOS devices is becoming difficult due to increasing gate leakage and subthreshold leakage. Multigate FETs have been proposed to overcome the limitations associated with the scaling of traditional CMOS devices below 100nm region. The multiple electrically coupled gates and the thin silicon body suppress the short-channel effects, thereby lowering the subthreshold leakage current in a multi-gate MOSFET. However, fabrication complexity increases for inversion mode (IM) FinFET devices due to ultra-steep doping profiles requirement. Junctionless transistor (JLT) overcomes the limitations associated with the creation of ultra-steep doping profiles during fabrication and short channel effects. In order to further reduce the SCEs, spacers at the both sides of gate are used that minimizes the leakage current. In this proposed work, JLT is designed with the use of spacer engineering i.e. changing the Lext, spacer's proportion as well as the dielectric values ( ) of spacer material and its performance are evaluated from device characteristics using TCAD software tool. 88 pp. Englisch.

Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The scaling of traditional planar CMOS devices is becoming difficult due to increasing gate leakage and subthreshold leakage. Multigate FETs have been proposed to overcome the limitations associated with the scaling of traditional CMOS devices below 100nm region. The multiple electrically coupled gates and the thin silicon body suppress the short-channel effects, thereby lowering the subthreshold leakage current in a multi-gate MOSFET. However, fabrication complexity increases for inversion mode (IM) FinFET devices due to ultra-steep doping profiles requirement. Junctionless transistor (JLT) overcomes the limitations associated with the creation of ultra-steep doping profiles during fabrication and short channel effects. In order to further reduce the SCEs, spacers at the both sides of gate are used that minimizes the leakage current. In this proposed work, JLT is designed with the use of spacer engineering i.e. changing the Lext, spacer's proportion as well as the dielectric values ( ) of spacer material and its performance are evaluated from device characteristics using TCAD software tool.

Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Kaur PrabhjotPrabhjot Kaur received her B.tech in Electronics and communication engineering From Guru Nanak Dev Engineering College, Ludhiana in 2016. From the same college, She received M.tech degree in 2018. Her major research area.