Electronic Structure Semiconductor Interfaces by Mönch Winfried (15 results)
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor-semiconductor interfaces… or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.
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Published by Springer, 2024
Series: Book 97 of 110 - Synthesis Lectures on Engineering, Science, and Technology
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Language: English
Published by Springer, 2024
Series: Book 97 of 110 - Synthesis Lectures on Engineering, Science, and Technology
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor-semiconductor interfaces or het…erostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.
Language: English
Published by Springer, 2024
Series: Book 97 of 110 - Synthesis Lectures on Engineering, Science, and Technology
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware 160 pp. Englisch.
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Published by Springer, Springer Jun 2024, 2024
Series: Book 97 of 110 - Synthesis Lectures on Engineering, Science, and Technology
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Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor-semiconductor i…nterfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors. 160 pp. Englisch.
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Published by Springer, Berlin|Springer Nature Switzerland|Springer, 2024
Series: Book 97 of 110 - Synthesis Lectures on Engineering, Science, and Technology
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semicon…ductor-semiconductor interfa.
Language: English
Published by Springer, 2024
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor-semiconducto…r interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 160 pp. Englisch.
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Published by Springer, Springer Jun 2024, 2024
Series: Book 97 of 110 - Synthesis Lectures on Engineering, Science, and Technology
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Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal¿semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor¿semiconductor inter…faces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 160 pp. Englisch.
Language: English
Published by Springer, 2024
Series: Book 97 of 110 - Synthesis Lectures on Engineering, Science, and Technology
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