Defects High K Gate Dielectric (20 results)

Condition: New.

Taschenbuch. Condition: Neu. Defects in HIgh-k Gate Dielectric Stacks | Nano-Electronic Semiconductor Devices | Evgeni Gusev | Taschenbuch | xii | Englisch | 2011 | Springer | EAN 9781402043666 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - The goal of this NATO Advanced Research Workshop (ARW) entitled 'Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices', which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.…

Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - The goal of this NATO Advanced Research Workshop (ARW) entitled 'Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices', which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.…

Condition: New. pp. 508.

Condition: New. pp. xi + 492.

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Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Research Workshop on Defects in Advanced High-K Dielectric Nano-Electronic Semiconductor Devices, St. Petersburg, Russia, from 11 to 14 July 2005. |To the best of our knowledge, this is the first focused collection of pap.…

Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Research Workshop on Defects in Advanced High-K Dielectric Nano-Electronic Semiconductor Devices, St. Petersburg, Russia, from 11 to 14 July 2005.|To the best of our knowledge, this is the first focused collection of pape.…

Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The goal of this NATO Advanced Research Workshop (ARW) entitled 'Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices', which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market. 508 pp. Englisch. …

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The goal of this NATO Advanced Research Workshop (ARW) entitled 'Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices', which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market. 508 pp. Englisch.…

Buch. Condition: Neu. Defects in HIgh-k Gate Dielectric Stacks | Nano-Electronic Semiconductor Devices | Evgeni Gusev | Buch | NATO Science Series II: Mathematics, Physics and Chemistry | xii | Englisch | 2006 | Springer | EAN 9781402043659 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand. …

Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The goal of this NATO Advanced Research Workshop (ARW) entitled ¿Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices¿, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 508 pp. Englisch. …

Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The goal of this NATO Advanced Research Workshop (ARW) entitled ¿Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices¿, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 508 pp. Englisch. …

Condition: New. Print on Demand pp. 508 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam.

Condition: New. Print on Demand pp. xi + 492.

Condition: New. PRINT ON DEMAND pp. 508.

Condition: New. PRINT ON DEMAND pp. xi + 492.