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Based High Dielectrics Process (12 results)
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Soft Cover. Condition: Acceptable. Ex-library with the usual features. Library label on front cover. The interior is clean and tight. Several pages have corner bent. Binding is good. Cover shows light edge wear and has one corner bent. Ex-Library.
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Condition: As New. Unread book in perfect condition.
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Condition: New. 1st edition NO-PA16APR2015-KAP.
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Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability (Synthesis Lectures on Solid State Materials and Devices)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 28.86
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In English.
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Hf-based High-k Dielectrics : Process Development, Performance Characterization, and Reliability
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: New.
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Hf-based High-k Dielectrics : Process Development, Performance Characterization, and Reliability
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: As New. Unread book in perfect condition.
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Hf-BASED HIGH-k DIELECTRICS: Process Development, Performance Characterization, and Reliability (Synthesis Lectures on Solid State Materials and Devices)
Language: English
Published by Morgan and Claypool Publishers, 2005
ISBN 10: 1598290045 ISBN 13: 9781598290042
Paperback. Condition: New.
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Hf-Based High-k Dielectrics : Process Development, Performance Characterization, and Reliability
Language: English
Published by Springer International Publishing, 2007
ISBN 10: 3031014243 ISBN 13: 9783031014246
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.
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Taschenbuch. Condition: Neu. Hf-Based High-k Dielectrics | Process Development, Performance Characterization, and Reliability | Young-Hee Kim (u. a.) | Taschenbuch | Synthesis Lectures on Solid State Materials and Devices | x | Englisch | 2007 | Springer | EAN 9783031014246 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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