Yoon Byung (60 results)

Condition: Good. Former library copy. Pages intact with minimal writing/highlighting. The binding may be loose and creased. Dust jackets/supplements are not included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good. Yang Kyung-Il; Yoon Seung-Ki; Park Sung-Woo; Byun Byung-jun (illustrator).…

paperback. Condition: Very Good. Connecting readers with great books since 1972! Used books may not include companion materials, and may have some shelf wear or limited writing. We ship orders daily and Customer Service is our top priority. Yang Kyung-Il; Yoon Seung-Ki; Park Sung-Woo; Byun Byung-jun (illustrator).…

XVIII, 347 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.

2nd ed. 2020. XIV, 425 p. Hardcover. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Topics in Applied Physics, 131. Sprache: Englisch.

2nd ed. 2020. 16 x 24 cm. XIV, 425 S. XIV, 425 p. 313 illus., 183 illus. in color. Softcover (Topics in Applied Physics). Sprache: Englisch.

Condition: New. Print on Demand.

Hardcover. Condition: Gut. 347 S. Ex-library with stamp and library-signature in good condition, some traces of use. C-00991 9789402408393 Sprache: Englisch Gewicht in Gramm: 550.

Hardcover. Condition: New.

Condition: Sehr gut. Zustand: Sehr gut | Seiten: 347 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.

Condition: New. In.

Condition: New. In.

Condition: New. 1st ed. 2021 edition NO-PA16APR2015-KAP.

Condition: New.

Condition: New. 1st Edition NO-PA16APR2015-KAP.

Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book reviews recent advances in the emerging field ofcomputational network biology with special emphasis on comparative network analysis and networkmodule detection. The chapters in this volume are contributed by leading international researchers in computational network biology and offer in-depth insighton the latest techniques innetwork alignment, network clustering, and network module detection. Chaptersdiscuss the advantages of the respective techniques and present thecurrent challenges and open problems in the field.Recent Advances in Biological Network Analysis: Comparative Network Analysis and Network Module Detection will serve as a great resource forgraduate students, academics, and researchers who are currently working in areas relevant to computational network biology or wish to learn more about the field. Data scientists whose work involves the analysis of graphs, networks, and other types of datawith topological structure or relations can also benefit from the book's insights.…

Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book reviews recent advances in the emerging field ofcomputational network biology with special emphasis on comparative network analysis and networkmodule detection. The chapters in this volume are contributed by leading international researchers in computational network biology and offer in-depth insighton the latest techniques innetwork alignment, network clustering, and network module detection. Chaptersdiscuss the advantages of the respective techniques and present thecurrent challenges and open problems in the field.Recent Advances in Biological Network Analysis: Comparative Network Analysis and Network Module Detection will serve as a great resource forgraduate students, academics, and researchers who are currently working in areas relevant to computational network biology or wish to learn more about the field. Data scientists whose work involves the analysis of graphs, networks, and other types of datawith topological structure or relations can also benefit from the book's insights.…

Hardcover. Condition: Brand New. 229 pages. 9.25x6.10x0.56 inches. In Stock.

Taschenbuch. Condition: Neu. Recent Advances in Biological Network Analysis | Comparative Network Analysis and Network Module Detection | Byung-Jun Yoon (u. a.) | Taschenbuch | xii | Englisch | 2022 | Springer | EAN 9783030571757 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.…

Condition: New. In.

Condition: New. pp. 365.

Taschenbuch. Condition: Neu. Ferroelectric-Gate Field Effect Transistor Memories | Device Physics and Applications | Byung-Eun Park (u. a.) | Taschenbuch | xviii | Englisch | 2018 | Springer | EAN 9789402414165 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.…

Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.…

Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.…

Condition: New.

Taschenbuch. Condition: Neu. Ferroelectric-Gate Field Effect Transistor Memories | Device Physics and Applications | Byung-Eun Park (u. a.) | Taschenbuch | Topics in Applied Physics | xiv | Englisch | 2021 | Springer | EAN 9789811512148 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Paperback. Condition: Brand New. reprint edition. 347 pages. 9.25x6.10x0.83 inches. In Stock.

Condition: New.

paperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Paperback. Condition: Brand New. 2nd edition. 439 pages. 9.25x6.10x1.06 inches. In Stock.