Vavilov V S (37 results)

Pamphlet. 63p., stapled wraps, 4.75x7.25 inches, illus. with b&w portrait of Vavilov and photos of scientists at work, wraps lightly worn else very good condition. Illustrated Soviet Booklets.

PaperBack. Condition: New. Brand New! Fast Delivery This is an International Edition and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 6-10 days and we do have flat rate for up to 2LB. Extra shipping charges will be requested if the Book weight is more than 5 LB. This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability.…

First Edition. Good copy in the original stiff-card wrappers; edges slightly nicked and dust-dulled as with age. Physical description; 64 pages. Subjects; Soviet Science. Soviet Union History. Soviet News. 1 Kg.

First Edition. Good copy in the original stiff-card wrappers; edges slightly nicked and dust-dulled as with age. Physical description; 64 pages. Subjects; Soviet Science. Soviet Union History. Soviet News. 1 Kg.

Condition: New.

Condition: New. pp. 352 1st Edition.

Condition: New.

Condition: New. pp. 284.

Condition: Sobecubierta deslucida. 280 pág Tapa dura, tela con sobrecubierta Sobecubierta deslucida Radiation effects in semiconductors and semiconductors devices.

Paperback. Condition: Brand New. reprint edition. 280 pages. 8.50x5.51x0.64 inches. In Stock.

Condition: New. pp. 352.

Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - one.- I The Theory of the Formation and Nature of Radiation-Induced Defects.- II Experimental Study of Radiation Defects in Semiconductors and Control of Semiconductor Properties by Irradiation.- III Ionization in Semiconductors as a Result of the Stopping of Charged Particles, Absorption and Scattering of Photons.- Two.- I Radiation Effects in Transistors.- II Radiation Effects in Semiconductor Diodes.- III Effect of Pulsed Radiation on Semiconductor Devices.…

Paperback. Condition: Brand New. 1st edition. 342 pages. 8.43x0.87x5.43 inches. In Stock.

Taschenbuch. Condition: Neu. Radiation Effects in Semiconductors and Semiconductor Devices | V. S. Vavilov | Taschenbuch | 280 S. | Englisch | 2012 | Springer | EAN 9781468490718 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Condition: new. Pages: 144 Language: Russian. V uchebnom posobii otrazheny voprosy, kasajuschiesja izuchenija i otsenki resursnogo znachenija vsekh komponentov landshafta: geologicheskogo fundamenta, materinskikh gornykh porod, pochv, relefa i rastitelnogo pokrova v opredelennykh klimaticheskikh uslovijakh. Privoditsja informatsija o svojstvakh i klassifikatsijakh etikh komponentov prirodnoj sredy, metodakh i effektivnosti ikh raspoznavanija na materialakh distantsionnogo zondirovanija. V posobii rassmotreny vazhnye napravlenija prikladnoj kosmonavtiki i aerosemki, posvjaschennye resheniju zadach lesnogo khozjajstva i okhrany prirody. Otlichitelnoj chertoj posobija javljaetsja sochetanie dannykh o prirodnykh resursakh, ikh kharakteristikakh i znachenii s bazovymi svedenijami o distantsionnykh metodakh izuchenija i otsenki etikh resursov. Kak dopolnitelnyj material posobie mozhet ispolzovatsja pri osvoenii distsiplin lesokhozjajstvennogo profilja.Prednaznacheno dlja studentov kolledzhej i tekhnikumov, obuchajuschikhsja po spetsialnosti "Lesnoe i lesoparkovoe khozjajstvo". 9785811471218.…

Paperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

hardcover. Condition: Good. Good. Dust Jacket NOT present. CD WILL BE MISSING. . SHIPS FROM MULTIPLE LOCATIONS. book.

Hardcover. Condition: New. Brand new book, sourced directly from publisher. Dispatch time is 7-8 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.

Condition: New. pp. 352.

Condition: New.

Condition: New. pp. 352.

Hardcover. Condition: Brand New. 342 pages. 8.75x5.50x1.00 inches. In Stock.

Condition: new. Pages: 144 Language: Russian. Uchebnoe posobie napisano v sootvetstvii s programmoj kursa "Aerokosmicheskie metody v lesnom dele", kotoryj javljaetsja chastju podgotovki bakalavrov po napravleniju "Lesnoe delo". Pomimo obschego razdela, posobie kasaetsja izuchenija i otsenki resursnogo znachenija vsekh komponentov landshafta: geologicheskogo fundamenta, materinskikh gornykh porod, pochv, relefa i rastitelnogo pokrova v opredelennykh klimaticheskikh uslovijakh. Privoditsja informatsija o svojstvakh i klassifikatsijakh etikh komponentov prirodnoj sredy, metodakh i effektivnosti ikh raspoznavanija na materialakh distantsionnogo zondirovanija. V posobii rassmotreny vazhnye napravlenija prikladnoj kosmonavtiki i aerosemki, posvjaschennye resheniju zadach lesnogo khozjajstva i okhrany prirody. Otlichitelnoj chertoj posobija javljaetsja sochetanie dannykh o prirodnykh resursakh, ikh kharakteristikakh i znachenii s bazovymi svedenijami o distantsionnykh metodakh izuchenija i otsenki etikh resursov. Kak dopolnitelnyj material posobie mozhet ispolzovatsja pri osvoenii distsiplin lesokhozjajstvennogo profilja, a takzhe dlja obuchenija po programmam magistratury. 9785811444267.…

Leatherbound. Condition: NEW. BOOKS ARE EXEMPT FROM IMPORT DUTIES AND TARIFFS; NO EXTRA CHARGES APPLY. Leather Binding on Spine and Corners with Golden leaf printing on spine. Bound in genuine leather with Satin ribbon page markers and Spine with raised gilt bands. A perfect gift for your loved ones. Reprinted from 1959 edition. NO changes have been made to the original text. This is NOT a retyped or an ocr'd reprint. Illustrations, Index, if any, are included in black and white. Each page is checked manually before printing. As this print on demand book is reprinted from a very old book, there could be some missing or flawed pages, but we always try to make the book as complete as possible. Fold-outs, if any, are not part of the book. If the original book was published in multiple volumes then this reprint is of only one volume, not the whole set and contains approximately 18 pages. IF YOU WISH TO ORDER PARTICULAR VOLUME OR ALL THE VOLUMES YOU CAN CONTACT US. Resized as per current standards. Sewing binding for longer life, where the book block is actually sewn (smythe sewn/section sewn) with thread before binding which results in a more durable type of binding. Language: English.…

Hardcover. Condition: Very Good. 1st Edition. First edition. 1979. In English and Russian. Very good hardcover. Scarce. Book.

Hardcover. Condition: Fine condition. No dust jacket. Revised from the 1987 Russan edition. Moscow [USSR]: MIR Publsihers, 1990. Scarce in the US. We have only this one copy, but it is available now and ready to ship today from Henderson, Nevada. Fine condition. Square and tight. Sharp corners. NO fading. NO owner's name or bookplate. NOT a library discard. NOT a remainder. Pages are fresh, crisp, clean and unmarked. NO underlining. NO highlighting. NO margin notes. Translated from the Russian by Irene Aleksanova. First published 1990. Revised from the 1987 Russan edition. Contents: Preface. List of Symbols, Chapter 1. Rational Equations, Inequalities, and Sytems. Chapter 2. Systems of Equations. Chapter 3, Equivalent Equations and Inequalities. Chapter 4, Equations in One Variable. Chapter 5. Inequalities in One Variable. Hints and Answers. Appendix. Bound in the original dark blue cloth stamped in white and a different shade of blue. Revised from the 1987 Russan edition. Hardcover. Fine condition/No dust jacket. Illus. by NOT a library discard. 456pp. Great Packaging, Fast Shipping. NOT a library discard (illustrator).…

Condition: new. Questo è un articolo print on demand.

PF. Condition: New. This item is printed on demand. Brand new book, sourced directly from publisher. Dispatch time is 6-7 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.

Condition: New. pp. 352 This item is printed on demand.

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -one.- I The Theory of the Formation and Nature of Radiation-Induced Defects.- 1. Production of Radiation Defects by Fast Electrons and -Rays.- 2. On the Production of Frenkel Defects in Diamond-type Lattices.- The 0 01 transition.- Displacement into point b [(2, 0, 0,), (0, 2, 0) or (0, 0, 2)].- 3. Defect Production by Neutrons and by Heavy Charged Particles.- 4. Defect Production by Ionization Processes.- II Experimental Study of Radiation Defects in Semiconductors and Control of Semiconductor Properties by Irradiation.- 1. Threshold Energy of Defect Production in Germanium, Silicon and Other Semiconductors.- 2. Optical and Photoelectric Investigation of Radiation-Induced Defects.- Photoconductivity Spectra.- Photoconductivity relaxation.- 3. Investigation of Defects by Electron Paramagnetic Resonance (EPR) and by Measurement of Changes in the Magnetic Properties.- E-centers.- J- and C-centers.- B-centers.- 4. Interaction of Radiation-Induced Defects with Impurities.- Energy spectrum of radiation-induced defects in silicon.- Radiation defects in lithium-doped silicon 60 Radiation-induced defects in pure germanium and in gold-doped germanium.- 5. Stability and Annealing of Radiation Defects in Semiconductors.- Low-temperature irradiation and annealing.- 6. The Influence of Defect Clusters, Produced by Fast Neutrons and Heavy Charged Particles, on the Properties of Semiconductors.- 7. Structural Investigation of Radiation Defects in Semiconductors.- Data on isolated (point) defects.- Radiation-induced defect clusters in germanium and silicon.- Radiation-induced defect clusters in semiconductor compounds of the AIII BV type.- Electron microscopy methods.- 8. Influence of Radiation Defects on the Thermal Conductivity of Semiconductors.- 9. Radiation Doping of Semiconductors.- Ion implantation of dopants.- ¿Channeling ¿ of charged particles in crystals.- Doping by nuclear reactions (transmutation doping).- III Ionization in Semiconductors as a Result of the Stopping of Charged Particles, Absorption and Scattering of Photons.- 1. Energy Losses on Ionization.- Energy losses by charged particles.- Ionization as a result of absorption and scattering of -radiation and X-rays.- 2. Mean Ionization Energy in Semiconductors.- 3. Energy Consumed in the Ionization and Excitation of Lattice Vibrations.- Two.- I Radiation Effects in Transistors.- 1. Experimental Determination of the Properties of Irradiated Transistors.- 2. Main Functions Determining the Rate of Change of Transistor Parameters as a Result of Bulk Processes. Criteria of Radiation Stability of Transistors.- 3. Behavior of Transistors Irradiated with Large Doses.- 4. Effect of Recombination at p-n Junctions on the Current Transport Coefficient of Transistors.- 5. Dependence of Radiation-Induced Changes in the Lifetime of Minority Carriers on the Electrophysical Properties of Irradiated Semiconductor Materials.- Germanium.- Silicon.- 6. Surface Effects in Irradiated Transistors.- 7. Influence of Operating Conditions and Irradiation Temperature on the Radiation Stability of Transistors.- 8. Some Problems of Thyristor Operation Under Irradiation.- II Radiation Effects in Semiconductor Diodes.- 1. Stable Radiation-Induced Changes in the Forward Branch of the V-I Characteristics of Diodes.- 2. Experimental Data on Changes in the Conductivity of Germanium and Silicon upon Irradiation.- 3. Radiation-Induced Changes in the Reverse V-I Characteristics of Diodes.- 4. Effect of Radiation on the Parameters of ¿Stabilitrons¿.- III Effect of Pulsed Radiation on Semiconductor Devices.- 1. Characteristics of Pulsed Irradiation of Semiconductor Devices.- 2. Ionization Current in p-n Junctions.- 3. Equivalent Diode Circuit Modelling Diode Response to Ionizing Radiation Pulses.- 4. Response of Transistors to Ionizing Radiation Pulses and Equivalent Circuits.- 5. Experimental Data on the Effect of Pulsed Radiation on Semiconductor.…