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Language: English
Published by Van Nostrand Reinhold, 1983
ISBN 10: 0442225385 ISBN 13: 9780442225384
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Hardcover. Condition: Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority!
Language: English
Published by Van Nostrand Reinhold, (1983)., New York, NY, U.S.A., 1983
ISBN 10: 0442225385 ISBN 13: 9780442225384
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Language: English
Published by Van Nostrand Reinhold Company, 1997
ISBN 10: 0442225385 ISBN 13: 9780442225384
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hardcover. Condition: Used, very good. Book and jacket just about like new. This is a brown book in blue jacket, 1997, Van Nostrand, 559p. Book as new except upper page edges very light soiled due to being dusty for a long time; jacket has slightest edgewear. No marks or writing. **We provide professional service and individual attention to your order, daily shipments, and sturdy packaging. FREE TRACKING ON ALL SHIPMENTS WITHIN USA.
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Language: English
Published by Van Nostrand Reinhold, 1983
ISBN 10: 0442225385 ISBN 13: 9780442225384
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Language: English
Published by Van Nost.Reinhold,U.S., 1983
ISBN 10: 0442225385 ISBN 13: 9780442225384
Seller: Ammareal, Morangis, France
Hardcover. Condition: Très bon. Ancien livre de bibliothèque. Livre un peu vrillé. Légères traces d'usure sur la couverture. Salissures sur la tranche. Edition 1983. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Very good. Former library book. Book slightly twisted. Slight signs of wear on the cover. Stains on the edge. Edition 1983. Ammareal gives back up to 15% of this item's net price to charity organizations.
Seller: Grand Eagle Retail, Bensenville, IL, U.S.A.
Paperback. Condition: new. Paperback. Chapter I describes deposition as a basic microelectronics technique. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon oxide. The main advantage of PECVD stems from the intro duction of plasma energy to the CVD environment, which makes it possible to promote chemical reactions at relatively low temperatures. A natural extension of this is to use this plasma energy to lower the temperature required to obtain a crystalline deposit. This chapter discusses the PECVD technique and its ap plication to the deposition of dielectric, semiconductor, and conductor films of interest to microelectronics. Chapter 2 acquaints the reader with the technology and capabilities of plasma processing. Batch etching reactors and etching processes are approaching ma turity after more than ten years of development. Requirements of anisotropic and selective etching have been met using a variety of reactor configurations and etching gases. The present emphasis is the integration of plasma etching processes into the overall fabrication sequence. Chapter 3 reviews recent advances in high pressure oxidation technology and its applications to integrated circuits. The high pressure oxidation system, oxi dation mechanisms, oxidation-induced stacking faults, impurity segregation, and oxide quality are described. Applications to bipolar and MOS devices are also presented. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon oxide. Batch etching reactors and etching processes are approaching ma turity after more than ten years of development. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
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Language: English
Published by Secaucus, New Jersey, U.S.A.: Kluwer Academic Pub, 1988
ISBN 10: 0442276885 ISBN 13: 9780442276881
Seller: Rob the Book Man, Vancouver, WA, U.S.A.
Hardcover. Condition: Fine. Dust Jacket Condition: Fine. Hardback in near fine condition with near fine dust jacket. Previous owner stamp on inside of front cover, otherwise clean.
Seller: Books Puddle, New York, NY, U.S.A.
Condition: New. pp. 962.
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Seller: Mispah books, Redhill, SURRE, United Kingdom
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Seller: Revaluation Books, Exeter, United Kingdom
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Language: English
Published by Springer Netherlands, 2012
ISBN 10: 9401170584 ISBN 13: 9789401170581
Seller: AHA-BUCH GmbH, Einbeck, Germany
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Chapter I describes deposition as a basic microelectronics technique. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon oxide. The main advantage of PECVD stems from the intro duction of plasma energy to the CVD environment, which makes it possible to promote chemical reactions at relatively low temperatures. A natural extension of this is to use this plasma energy to lower the temperature required to obtain a crystalline deposit. This chapter discusses the PECVD technique and its ap plication to the deposition of dielectric, semiconductor, and conductor films of interest to microelectronics. Chapter 2 acquaints the reader with the technology and capabilities of plasma processing. Batch etching reactors and etching processes are approaching ma turity after more than ten years of development. Requirements of anisotropic and selective etching have been met using a variety of reactor configurations and etching gases. The present emphasis is the integration of plasma etching processes into the overall fabrication sequence. Chapter 3 reviews recent advances in high pressure oxidation technology and its applications to integrated circuits. The high pressure oxidation system, oxi dation mechanisms, oxidation-induced stacking faults, impurity segregation, and oxide quality are described. Applications to bipolar and MOS devices are also presented.
Seller: Mispah books, Redhill, SURRE, United Kingdom
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Gebunden. Condition: New. A growing concern of mine has been the unrealistic expectations for new computer-related technologies introduced into all kinds of organizations. Unrealistic expectations lead to disappointment, and a schizophrenic approach to the introduction of new techno.
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Paperback. Condition: new. Paperback. Chapter I describes deposition as a basic microelectronics technique. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon oxide. The main advantage of PECVD stems from the intro duction of plasma energy to the CVD environment, which makes it possible to promote chemical reactions at relatively low temperatures. A natural extension of this is to use this plasma energy to lower the temperature required to obtain a crystalline deposit. This chapter discusses the PECVD technique and its ap plication to the deposition of dielectric, semiconductor, and conductor films of interest to microelectronics. Chapter 2 acquaints the reader with the technology and capabilities of plasma processing. Batch etching reactors and etching processes are approaching ma turity after more than ten years of development. Requirements of anisotropic and selective etching have been met using a variety of reactor configurations and etching gases. The present emphasis is the integration of plasma etching processes into the overall fabrication sequence. Chapter 3 reviews recent advances in high pressure oxidation technology and its applications to integrated circuits. The high pressure oxidation system, oxi dation mechanisms, oxidation-induced stacking faults, impurity segregation, and oxide quality are described. Applications to bipolar and MOS devices are also presented. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon oxide. Batch etching reactors and etching processes are approaching ma turity after more than ten years of development. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
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Language: English
Published by Springer Netherlands Jun 2012, 2012
ISBN 10: 9401170584 ISBN 13: 9789401170581
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Chapter I describes deposition as a basic microelectronics technique. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon oxide. The main advantage of PECVD stems from the intro duction of plasma energy to the CVD environment, which makes it possible to promote chemical reactions at relatively low temperatures. A natural extension of this is to use this plasma energy to lower the temperature required to obtain a crystalline deposit. This chapter discusses the PECVD technique and its ap plication to the deposition of dielectric, semiconductor, and conductor films of interest to microelectronics. Chapter 2 acquaints the reader with the technology and capabilities of plasma processing. Batch etching reactors and etching processes are approaching ma turity after more than ten years of development. Requirements of anisotropic and selective etching have been met using a variety of reactor configurations and etching gases. The present emphasis is the integration of plasma etching processes into the overall fabrication sequence. Chapter 3 reviews recent advances in high pressure oxidation technology and its applications to integrated circuits. The high pressure oxidation system, oxi dation mechanisms, oxidation-induced stacking faults, impurity segregation, and oxide quality are described. Applications to bipolar and MOS devices are also presented. 960 pp. Englisch.