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Hydrogen in Semiconductors II (Volume 61) (Semiconductors and Semimetals, Volume 61)
Seller: Goodwill of Silicon Valley, SAN JOSE, CA, U.S.A.
Seller rating 5 out of 5 stars
Condition: good. Supports Goodwill of Silicon Valley job training programs. The cover and pages are in Good condition! Any other included accessories are also in Good condition showing use. Use can include some highlighting and writing, page and cover creases as well as other types visible wear.
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Hydrogen in Semiconductors: Symposium Held April 13-14, San Francisco, California, U.S.A.
Language: English
Published by Materials Research Society, 2004
ISBN 10: 1558997636 ISBN 13: 9781558997639
Condition: Used: Good. xlibrary 2004 hc no dj as issued vol 813 withdrawn stamp in book/ on edge of pages clean crisp pages rare and out of print 189 pages::: K-19.
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Literatur in Westfalen: Beiträge zur Forschung 22
Seller: Rarewaves.com USA, London, LONDO, United Kingdom
Seller rating 5 out of 5 stars
Paperback. Condition: New. Erstauflage.
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Gullivers Reisen zu den Zwergen und zu den Riesen
Book 5 of 36: Manesse BibliothekSeller: Storisende Versandbuchhandlung, Melle, Germany
Seller rating 5 out of 5 stars
Condition: befriedigend. Sprache: deutsch Leinen ,Schutzumschlag fehlt.
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Zinc Oxide - A Material for Micro- and Optoelectronic Applications: Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for ... II: Mathematics, Physics and Chemistry, 194)
Book 119 of 241: NATO Science Series II: Mathematics, Physics and ChemistrySeller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 137.84
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Zinc Oxide - A Material for Micro- and Optoelectronic Applications: Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for ... II: Mathematics, Physics and Chemistry, 194)
Book 119 of 241: NATO Science Series II: Mathematics, Physics and ChemistrySeller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 137.84
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Condition: As New. Unread book in perfect condition.
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Zinc Oxide : A Material for Micro- And Optoelectronic Applications
Book 119 of 241: NATO Science Series II: Mathematics, Physics and ChemistrySeller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
£ 137.83
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Zinc Oxide : A Material for Micro- And Optoelectronic Applications
Book 119 of 241: NATO Science Series II: Mathematics, Physics and ChemistrySeller: GreatBookPricesUK, Woodford Green, United Kingdom
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£ 137.83
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Zinc Oxide : A Material for Micro- And Optoelectronic Applications
Book 119 of 241: NATO Science Series II: Mathematics, Physics and ChemistrySeller: GreatBookPricesUK, Woodford Green, United Kingdom
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£ 152.32
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Zinc Oxide - A Material for Micro- and Optoelectronic Applications : Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004
Book 119 of 241: NATO Science Series II: Mathematics, Physics and ChemistryBuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on 'Zinc oxide as a material for micro- and optoelectronic applications', held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.
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Zinc Oxide : A Material for Micro- And Optoelectronic Applications
Book 119 of 241: NATO Science Series II: Mathematics, Physics and ChemistrySeller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
£ 214.99
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Hardcover. Condition: Like New. Like New. book.
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Condition: As New. Unread book in perfect condition.
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Zinc Oxide - A Material for Micro- And Optoelectronic Applications : Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- And Optoelectronic Applications, Held in St. Petersburg, Russia, from 23 to 25 June 2004
Book 119 of 241: NATO Science Series II: Mathematics, Physics and ChemistryTaschenbuch. Condition: Neu. Neuware - Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on 'Zinc oxide as a material for micro- and optoelectronic applications', held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.
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Hardcover. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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Paperback. Condition: Brand New. 216 pages. 10.00x7.00x0.49 inches. In Stock.
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Fine condition. Hardbound. No Marks.
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Paperback. Condition: New. Erstauflage.
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Zinc Oxide - A Material for Micro- and Optoelectronic Applications
Book 119 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Springer Netherlands Aug 2005, 2005
ISBN 10: 1402034733 ISBN 13: 9781402034732
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on 'Zinc oxide as a material for micro- and optoelectronic applications', held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV. 256 pp. Englisch.
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Zinc Oxide - A Material for Micro- and Optoelectronic Applications
Book 119 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Springer Netherlands, 2005
ISBN 10: 1402034733 ISBN 13: 9781402034732
Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Latest research results on the fabrication and fundamental understanding of ZnO and ZnO based devicesZnO bulk and layer growth of undoped and p-type doped material, influence of impurities (oxygen, hydrogen, transition metals) on electrical and op.
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Zinc Oxide - A Material for Micro- and Optoelectronic Applications | Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004
Book 119 of 241: NATO Science Series II: Mathematics, Physics and ChemistryBuch. Condition: Neu. Zinc Oxide - A Material for Micro- and Optoelectronic Applications | Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004 | Norbert H. Nickel (u. a.) | Buch | xvi | Englisch | 2005 | Springer | EAN 9781402034732 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.
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Condition: New. Print on Demand pp. 260 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
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Zinc Oxide - A Material for Micro- and Optoelectronic Applications
Book 119 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Springer, Springer Aug 2005, 2005
ISBN 10: 1402034733 ISBN 13: 9781402034732
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on ¿Zinc oxide as a material for micro- and optoelectronic applications¿, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 ¿ 40 meV and 60 ¿ 70 meV.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 256 pp. Englisch.
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Condition: New. PRINT ON DEMAND pp. 260.
