Design Of SRAM Cells For Low Power Dissipation And High SNM

Geetika Srivastava

ISBN 10: 3659263893 / ISBN 13: 9783659263897

Published by LAP LAMBERT Academic Publishing Okt 2012, 2012

About this Item

Neuware -During past few decades CMOS IC technologies have been aggressively scaled down to nanometer regime. Due to verity of demands of different circuit applications, integrated memories especially SRAM cell layout has been facing significant improvement. So in depth knowledge and detail analysis about the stability of the SRAM cells and the impact of physical parameters variation is a must in modern CMOS designs. As these high density circuits consume an excessive amount of power and generate an increased amount of heat they are more susceptible to run time failures and present serious reliability problems. SRAM arrays consume a large portion of the chip area in today¿s embedded system hence it seems very interesting as well as important to investigate this particular component. Circuit designers are realizing the importance of limiting power consumption and improving energy efficiency at all levels of design. Reducing the power dissipation in memories can significantly improve the system power-efficiency, performance, reliability, and overall costs. In this book various SRAM architectures with different leakage power reduction schemes have been investigated in Deep Submicron region.Books on Demand GmbH, Überseering 33, 22297 Hamburg 92 pp. Englisch.

Seller Inventory # 9783659263897

Bibliographic Details

• Title: Design Of SRAM Cells For Low Power Dissipation And High SNM
• Publisher: LAP LAMBERT Academic Publishing Okt 2012
• Publication Date: 2012
• Language: English
• ISBN 10: 3659263893
• ISBN 13: 9783659263897
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 6D millimeters 220 millimeters width by 150 millimeters height by 6 millimeters depth
• Weight: 155 grams

About this title

Synopsis

During past few decades CMOS IC technologies have been aggressively scaled down to nanometer regime. Due to verity of demands of different circuit applications, integrated memories especially SRAM cell layout has been facing significant improvement. So in depth knowledge and detail analysis about the stability of the SRAM cells and the impact of physical parameters variation is a must in modern CMOS designs. As these high density circuits consume an excessive amount of power and generate an increased amount of heat they are more susceptible to run time failures and present serious reliability problems. SRAM arrays consume a large portion of the chip area in today’s embedded system hence it seems very interesting as well as important to investigate this particular component. Circuit designers are realizing the importance of limiting power consumption and improving energy efficiency at all levels of design. Reducing the power dissipation in memories can significantly improve the system power-efficiency, performance, reliability, and overall costs. In this book various SRAM architectures with different leakage power reduction schemes have been investigated in Deep Submicron region.

About the Author

Dr. Geetika Srivastava, M.Tech., Ph.D.(Electronics). Has more than 8 years of teaching and research experience and published many reputed international journal research papers. Qualified UGC-NET Examination in Electronics Science. Presently working as Assistant Professor in Amity School of Engineering and Technology, AMITY University, Lucknow.