Items related to Surface Engineering: Surface Modification of Materials:...
Synopsis
Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution.
"synopsis" may belong to another edition of this title.
Buy New
View this item
£ 404.53
£ 9.52 shipping from Germany to United Kingdom
Destination, rates & speedsOther Popular Editions of the Same Title
Search results for Surface Engineering: Surface Modification of Materials:...
Stock Image
Surface Engineering. Surface Modification of Materials. NATO ASI Series E Applied Science No. 85
Seller: Zubal-Books, Since 1961, Cleveland, OH, U.S.A.
Seller rating 5 out of 5 stars
Condition: Good. 764 pp., hardcover, ex library, but text and binding still clean, bright and tight, . - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country. Photos available upon request. Seller Inventory # ZB401397
Quantity: 1 available
Stock Image
Surface Engineering: Surface Modification of Materials (NATO Science Series E:)
Seller: Mispah books, Redhill, SURRE, United Kingdom
Seller rating 4 out of 5 stars
Hardcover. Condition: Very Good. Dust Jacket may NOT BE INCLUDED.CDs may be missing. book. Seller Inventory # ERICA82590247309374
Quantity: 1 available
Seller Image
Surface Engineering
Published by
Springer Netherlands Nov 1984, 1984
ISBN 10: 9024730937
ISBN 13: 9789024730933
New
Hardcover
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution. 780 pp. Englisch. Seller Inventory # 9789024730933
Quantity: 2 available
Seller Image
Surface Engineering
Print on DemandSeller: moluna, Greven, Germany
Seller rating 5 out of 5 stars
Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Study Institute on Surface Engineering, Les Arcs, France, July 3-15, 1983 Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resu. Seller Inventory # 5813551
Quantity: Over 20 available
Stock Image
Surface Engineering: Surface Modification of Materials (NATO Science Series E:, 85)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
Condition: New. In. Seller Inventory # ria9789024730933_new
Quantity: Over 20 available
Seller Image
Surface Engineering : Surface Modification of Materials
Published by
Springer Netherlands, Springer Netherlands, 1984
ISBN 10: 9024730937
ISBN 13: 9789024730933
New
Hardcover
Seller: AHA-BUCH GmbH, Einbeck, Germany
Seller rating 5 out of 5 stars
Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution. Seller Inventory # 9789024730933
Quantity: 1 available
Seller Image
Surface Engineering
Published by
Springer Netherlands, Springer Netherlands Nov 1984, 1984
ISBN 10: 9024730937
ISBN 13: 9789024730933
New
Hardcover
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 780 pp. Englisch. Seller Inventory # 9789024730933
Quantity: 1 available