Silicon-Germanium (SiGe) Nanostructures: Production, Properties and Applications in Electronics (Woodhead Publishing Series in Electronic and Optical Materials) - Hardcover
Book 17 of 203: Woodhead Publishing Series in Electronic and Optical Materials
Synopsis
Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.
Key Features: reviews the materials science of nanostructures and their properties and applications in different electronic devices; assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys; explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition.
Contents: Part 1 Introduction: Structural properties of silicon-germanium (SiGe) nanostructures; Electronic band structures of SiGe alloys. Part 2 Formation of nanostructures: Understanding crystal growth mechanisms in SiGe nanostructures; Types of SiGe bulk crystal growth methods and their applications; SiGe crystal growth using molecular beam epitaxy; SiGe crystal growth using chemical vapour deposition; Strain engineering of SiGe virtual substrates; Formation of silicon-germanium-on-insulator (SGOI)substrates; Miscellaneous methods and materials for SiGe based heterostructures; Modelling the evolution of germanium islands on silicon(001) thin films; Strain engineering of SiGe micro- and nanostructures. Part 3 Material properties of SiGe nanostructures: Self-diffusion and dopant diffusion in germanium (Ge) and SiGe alloys; Dislocations and other strain-induced defects in SiGe nanostructures; Transport properties of SiGe nanostructures at low temperatures; Transport properties of SiGe nanostructures and applications in devices; Microcavities and quantum cascade laser structures based on SiGe nanostructures; Silicide and germanide technology for interconnections in ultra large scale integrated (ULSI) applications. Part 4 Devices using Si, Ge and SiGe alloys: SiGe heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies; SiGe-based field effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technologies; High electron mobility germanium (Ge) metal oxide semiconductor field effect transistors (MOSFETs); Silicon (Si) and germanium (Ge) in optical devices; Spintronics of nanostructured MnGe dilute magnetic semiconductor.
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About the Author
Yasuhiro Shiraki is X at Tokyo City University, Japan. Noritaka Usami is an Associate Professor at the Institute for Materials Research, Tohoku University, Japan.
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