Items related to Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMT...
Synopsis
A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including:
* An introductory chapter on the basic properties, growth process, and device physics of III-V materials
* Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design
* A discussion of transistor fabrication and device comparison
* 55 worked-out examples illustrating design considerations for a given application
* 215 figures and end-of-chapter practice problems
* Appendices listing parameters for various materials and transistor types
"synopsis" may belong to another edition of this title.
About the Author
WILLIAM LIU is a senior member of the technical staff at Texas Instruments, where he has worked since obtaining his PhD in electrical engineering from Stanford University in 1991. Dr. Liu has published numerous papers, reviews, and chapter contributions on HBTs. He holds thirteen U.S. patents on device and circuit design in various HBT technologies. He is a senior member of the IEEE.
From the Back Cover
A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including:
* An introductory chapter on the basic properties, growth process, and device physics of III-V materials
* Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design
* A discussion of transistor fabrication and device comparison
* 55 worked-out examples illustrating design considerations for a given application
* 215 figures and end-of-chapter practice problems
* Appendices listing parameters for various materials and transistor types
From the Inside Flap
A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including:
* An introductory chapter on the basic properties, growth process, and device physics of III-V materials
* Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design
* A discussion of transistor fabrication and device comparison
* 55 worked-out examples illustrating design considerations for a given application
* 215 figures and end-of-chapter practice problems
* Appendices listing parameters for various materials and transistor types
"About this title" may belong to another edition of this title.
- PublisherWiley-Interscience
- Publication date1999
- ISBN 10 0471297003
- ISBN 13 9780471297000
- BindingHardcover
- LanguageEnglish
- Edition number1
- Number of pages520
Search results for Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMT...
Stock Image
Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs
Published by
Wiley-Interscience (edition 1), 1999
ISBN 10: 0471297003
ISBN 13: 9780471297000
Used
Hardcover
Seller: BooksRun, Philadelphia, PA, U.S.A.
Seller rating 5 out of 5 stars
Hardcover. Condition: Fair. 1. Ship within 24hrs. Satisfaction 100% guaranteed. APO/FPO addresses supported. Seller Inventory # 0471297003-7-1
Quantity: 1 available
Stock Image
Fundamentals of III-V Devices
Seller: Buchpark, Trebbin, Germany
Seller rating 5 out of 5 stars
Condition: Gut. Zustand: Gut | Seiten: 520 | Sprache: Englisch | Produktart: Bücher. Seller Inventory # 545533/203
Quantity: 2 available
Seller Image
Fundamentals of Iii-V Devices : Hbts, Mesfets, and Hfets/Hemts
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: New. Seller Inventory # 32241-n
Quantity: Over 20 available
Stock Image
Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
Condition: New. In. Seller Inventory # ria9780471297000_new
Quantity: Over 20 available
Seller Image
Fundamentals of Iii-V Devices : Hbts, Mesfets, and Hfets/Hemts
Seller: GreatBookPrices, Columbia, MD, U.S.A.
Seller rating 5 out of 5 stars
Condition: New. Seller Inventory # 32241-n
Quantity: Over 20 available
Seller Image
Fundamentals of Iii-V Devices : Hbts, Mesfets, and Hfets/Hemts
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
Condition: As New. Unread book in perfect condition. Seller Inventory # 32241
Quantity: Over 20 available
Stock Image
Fundamentals of III-V Devices - HBTs, MESFETs, and HFETs/HEMTs
Print on DemandSeller: PBShop.store UK, Fairford, GLOS, United Kingdom
Seller rating 4 out of 5 stars
HRD. Condition: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Seller Inventory # L1-9780471297000
Quantity: Over 20 available
Stock Image
Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs
Seller: Toscana Books, AUSTIN, TX, U.S.A.
Seller rating 5 out of 5 stars
Hardcover. Condition: new. Excellent Condition.Excels in customer satisfaction, prompt replies, and quality checks. Seller Inventory # Scanned0471297003
Quantity: 1 available
Stock Image
Fundamentals of III-V Devices (Hardcover)
Published by
John Wiley & Sons Inc, New York, 1999
ISBN 10: 0471297003
ISBN 13: 9780471297000
New
Hardcover
First Edition
Seller: CitiRetail, Stevenage, United Kingdom
Seller rating 5 out of 5 stars
Hardcover. Condition: new. Hardcover. A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including: * An introductory chapter on the basic properties, growth process, and device physics of III-V materials * Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design * A discussion of transistor fabrication and device comparison * 55 worked-out examples illustrating design considerations for a given application * 215 figures and end-of-chapter practice problems * Appendices listing parameters for various materials and transistor types An introductory guide to heterojunction bipolar and field effect transistors, this handbook addresses the industry's growing need for faster, low-powered devices for use in cellular and wireless communications. These devices replace silicon bipolar transistors, promising superior performance in less time. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Seller Inventory # 9780471297000
Quantity: 1 available
Stock Image
Fundamentals of III-V Devices - HBTs, MESFETs, and HFETs/HEMTs
Print on DemandSeller: PBShop.store US, Wood Dale, IL, U.S.A.
Seller rating 5 out of 5 stars
HRD. Condition: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Seller Inventory # L1-9780471297000
Quantity: Over 20 available