Photo-induced Defects in Semiconductors (Paperback)

Language: English

Published by Cambridge University Press, Cambridge, 2006

0521024455 / 9780521024457

Series: Book 2 of 2 - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering

  • First Edition
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Paperback. This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in IIIV compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors. This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.…

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Title
Photo-induced Defects in Semiconductors (Paperback)
Author
David Redfield
Publisher
Cambridge University Press, Cambridge
Publication year
2006
Condition
new
Binding
Paperback
Language
English
ISBN 10
0521024455
ISBN 13
9780521024457
Edition
1st Edition
Series
Book 2 of 2: Cambridge Studies in Semiconductor Physics and Microelectronic Engineering

CitiRetail

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