Wear, Soil. W/Full markings, pocket, and/or bookplate. Will not fit in Flat Rate Priority Mail envelope. USPS Variable Rate applies for Domestic or International. Size: 4to.

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Bibliographic Details

Title

PROPERTIES OF LATTICE-MATCHED AND STRAINED, INDIUM GALLIUM ARSENIDE.

Publisher

INSPEC, The Institution of Electrical Engineers, Stevenage, Herts, United Kingdom

Publication Date

1993

Language

English

ISBN 10

0852968655

ISBN 13

9780852968659

Binding

Hardcover

Edition

1st Edition.

Condition

Good

Dust Jacket Condition

No Jacket

Book Type

Ex-Library

Seller catalogs

CHEMISTRY

About this title

Synopsis

The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.

Review

..".provides an authoritative and convenient collection of pertinent data on InGaAs."

"About this title" may belong to another edition of this title.

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SUNSET BOOKS 2
OH, U.S.A.

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