ICNS-4: Proceedings of The Fourth International Conference on Nitride Semiconductors-- Part A and Part B-- 2 Volumes

Ponce, Fernando A. (editor)

ISBN 10: 3527403477 / ISBN 13: 9783527403479

Published by Wiley-VCH, U.S.A., 2002

About this Item

2 volume Set; New hardcover, still in shrink wrap; SATISFACTION GUARANTEED; ALL ORDERS SHIPPED WITH DELIVERY CONFIRMATION; this is a large book and International orders will require additional postage; Size: 6 x 9". Seller Inventory # A56103D

Bibliographic Details

Title: ICNS-4: Proceedings of The Fourth ...

Publisher: Wiley-VCH, U.S.A.

Publication Date: 2002

Binding: Hardcover

Condition: New

Edition: First Edition.

About this title

Synopsis:

All aspects of nitride semiconductor systems and related materials are presented in these proceedings of the Fourth International Conference on Nitride Semiconductors (ICNS–4). Active nitride researchers present their latest results on all aspects of nitride semiconductor systems, which include compounds involving AlInGaN, GaNAsP, AlSiCN and other materials containing nitrogen as one of the major constituents. The authors cover scientific and technological developments associated with these materials, their processing and devices; for technological areas such as optoelectronics, high temperature electronics, etc.

ICNS–4 is held in Denver, Colorado, in 2001 and follows the ICNS–1 held in Boston and Nagoya (1995); ICNS–2 in Tokushima, Japan; and ICNS–3 in Montpellier, France (1999).

The topical areas included are as follows:
– Synthesis (substrates, precursors, bulk crystals, epitaxy, doping, heterostructures, regrowht, alloys)
– Fundamental Science (band structure, modeling of physical properties, quantum size effect, strain effect, surface phenomena)
– Characterization (determination of the structural, electrical, optical, etc. properties)
– Processing (etching (dry, wet), cleaving, high reflection coatings, ohmic, contacts, Schottky contacts)
– Devices (optoelectronics, high power, and high temperature, applications)