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Subthreshold Surface Potential Model by Sarkar Angsuman (8 results)
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Subthreshold Surface Potential Model for Short-Channel Mosfet | Using Pseudo 2d Analysis
Language: English
Published by LAP LAMBERT Academic Publishing, 2014
ISBN 10: 3659126098 ISBN 13: 9783659126093
Taschenbuch. Condition: Neu. Subthreshold Surface Potential Model for Short-Channel Mosfet | Using Pseudo 2d Analysis | Angsuman Sarkar | Taschenbuch | 84 S. | Englisch | 2014 | LAP LAMBERT Academic Publishing | EAN 9783659126093 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.
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Subthreshold Surface Potential Model for Short-Channel Mosfet: Using Pseudo 2d Analysis
Language: English
Published by LAP LAMBERT Academic Publishing, 2014
ISBN 10: 3659126098 ISBN 13: 9783659126093
paperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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Subthreshold Surface Potential Model for Short-Channel Mosfet
Language: English
Published by LAP LAMBERT Academic Publishing Feb 2014, 2014
ISBN 10: 3659126098 ISBN 13: 9783659126093
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET. 84 pp. Englisch.
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Subthreshold Surface Potential Model for Short-Channel Mosfet
Language: English
Published by VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2014
ISBN 10: 3659126098 ISBN 13: 9783659126093
Condition: New. Print on Demand pp. 84 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.
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Subthreshold Surface Potential Model for Short-Channel Mosfet
Language: English
Published by VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2014
ISBN 10: 3659126098 ISBN 13: 9783659126093
Condition: New. PRINT ON DEMAND pp. 84.
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Subthreshold Surface Potential Model for Short-Channel Mosfet
Language: English
Published by LAP LAMBERT Academic Publishing, 2014
ISBN 10: 3659126098 ISBN 13: 9783659126093
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Sarkar AngsumanDr. Angsuman Sarkar is presently serving as an Assistant Professor of Electronics and Communication Engineering in Kalyani Government Engineering College, West Bengal, India. He received the M.Tech degree in VLSI & Mic.
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Subthreshold Surface Potential Model for Short-Channel Mosfet
Language: English
Published by LAP LAMBERT Academic Publishing Feb 2014, 2014
ISBN 10: 3659126098 ISBN 13: 9783659126093
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 84 pp. Englisch.
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Subthreshold Surface Potential Model for Short-Channel Mosfet : Using Pseudo 2d Analysis
Language: English
Published by LAP LAMBERT Academic Publishing, 2014
ISBN 10: 3659126098 ISBN 13: 9783659126093
Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET.
