Subthreshold Surface Potential Model by Sarkar Angsuman (9 results)

Language: English
Published by VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2014
- Softcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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Condition: New. pp. 84.

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Taschenbuch. Condition: Neu. Subthreshold Surface Potential Model for Short-Channel Mosfet | Using Pseudo 2d Analysis | Angsuman Sarkar | Taschenbuch | 84 S. | Englisch | 2014 | LAP LAMBERT Academic Publishing | EAN 9783659126093 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück,… mail[at]preigu[dot]de | Anbieter: preigu.

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paperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Language: English
Published by LAP LAMBERT Academic Publishing Feb 2014, 2014
- Softcover
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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS)…road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET. 84 pp. Englisch.

Language: English
Published by VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2014
- Softcover
- Print on Demand
Seller: Majestic Books, Hounslow, United KingdomMajestic Books
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Condition: New. Print on Demand pp. 84 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

Language: English
Published by VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2014
- Softcover
- Print on Demand
Seller: Biblios, frankfurt am main, HESSE, GermanyBiblios
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Condition: New. PRINT ON DEMAND pp. 84.

- Softcover
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Seller: moluna, Greven, Germanymoluna
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Sarkar AngsumanDr. Angsuman Sarkar is presently serving as an Assistant Professor of Electronics and Communication Engineering in Kalyani Government Engineering College, West Bengal, India. He received…the M.Tech degree in VLSI & Mic.

Language: English
Published by LAP LAMBERT Academic Publishing Feb 2014, 2014
- Softcover
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Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road…-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 84 pp. Englisch.

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Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-…map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET.