Silicon Carbide Materials Processing by Moumita Mukherjee (4 results)

- Hardcover
Seller: California Books, Miami, FL, U.S.A.California Books
Contact seller5-star sellerCondition: New
£ 167.16
Free ShippingShips within U.S.A.Quantity: Over 20 available
Condition: New.

- Hardcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
Contact seller5-star sellerCondition: New
£ 162.08
£ 14.94 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Condition: New. In English.
More images- Hardcover
- Print on Demand
Seller: preigu, Osnabrück, Germanypreigu
Contact seller5-star sellerCondition: New
£ 121.49
£ 58.98 shippingShips from Germany to U.S.A.Quantity: 5 available
Buch. Condition: Neu. Silicon Carbide | Materials, Processing and Applications in Electronic Devices | Moumita Mukherjee | Buch | 560 S. | Englisch | 2011 | IntechOpen | EAN 9789533079684 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu Print on Demand. …

- Hardcover
- Print on Demand
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
Contact seller5-star sellerCondition: New
£ 157.75
£ 37.43 shippingShips from Germany to U.S.A.Quantity: 1 available
Buch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.…