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Condition: New. pp. 455.
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Modulation-Doped Field-Effect Transistors: Principles, Design and Technology
Published by IEEE Publications,U.S., 1990
ISBN 10: 0879422556 ISBN 13: 9780879422554
Language: English
£ 21.94
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Add to basketCondition: Sehr gut. Zustand: Sehr gut - Gepflegter, sauberer Zustand. Außen: vergilbt. Aus der Auflösung einer renommierten Bibliothek. Kann Stempel beinhalten. | Seiten: 516 | Sprache: Englisch | Produktart: Bücher.
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£ 25.92
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Add to basketCondition: Used: Very Good. Principles and Technology of Modulation Doped Field Effect Transistors: v. 1 | Morkoc et alii | Wiley, 1991, in-8 cartonnage éditeur, 261 pages. Couverture propre. Dos solide. Intérieur frais. Exemplaire de bibliothèque : petit code barre en pied de 1re de couv., cotation au dos, rares et discrets petits tampons à l'intérieur de l'ouvrage. Bel état ! [BT19+].
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Principles and Technology of Modulation Doped Field Effect Transistors: v. 1
Published by John Wiley & Sons Ltd, 1991
ISBN 10: 0471929204 ISBN 13: 9780471929208
Language: English
Hardcover. Condition: Très bon. Ancien livre de bibliothèque. Légères traces d'usure sur la couverture. Couverture différente. Edition 1991. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Very good. Former library book. Slight signs of wear on the cover. Different cover. Edition 1991. Ammareal gives back up to 15% of this item's net price to charity organizations.
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£ 29.92
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Add to basketCondition: New. pp. 455.
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Modulation-Doped Field-Effect Transistors
Published by IEEE Operations Center, 1842
ISBN 10: 0879422556 ISBN 13: 9780879422554
Language: English
Condition: New. pp. 516.
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£ 30.01
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Add to basketCondition: New. pp. 455.
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Hardcover. Condition: Very Good. Dust Jacket may NOT BE INCLUDED.CDs may be missing. book.
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£ 39.86
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£ 39.86
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Modulation-Doped Field-Effect Transistors
Published by IEEE Operations Center, 1842
ISBN 10: 0879422556 ISBN 13: 9780879422554
Language: English
£ 37.48
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Add to basketCondition: New. pp. 516.
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An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors
Published by BiblioScholar 2012-10-26, 2012
ISBN 10: 1286861640 ISBN 13: 9781286861646
Language: English
Paperback. Condition: New.
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Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors
Seller: Ria Christie Collections, Uxbridge, United Kingdom
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An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
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Modulation-Doped Field-Effect Transistors
Published by IEEE Operations Center, 1842
ISBN 10: 0879422556 ISBN 13: 9780879422554
Language: English
£ 40.59
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Add to basketCondition: New. pp. 516.
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£ 58.53
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£ 63.47
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£ 53.35
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Add to basketCondition: New. KlappentextrnrnThe effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems. Irradiation is also a valuable tool for analyzing the qua.
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Add to basketCondition: New. KlappentextrnrnIn this research, the first ever neutron irradiation study of AlGaN/GaN MODFETs was conducted. Devices irradiated to a total 1 MeV Eq (Si) neutron fluence of 1.2x10 16 n/cm2 demonstrated the temperature dependence of irradiation a.
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An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors
Published by Creative Media Partners, LLC Okt 2012, 2012
ISBN 10: 1286861640 ISBN 13: 9781286861646
Language: English
£ 69.96
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Add to basketTaschenbuch. Condition: Neu. Neuware - The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems. Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation. AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0.45 -1.2 MeV electrons up to doses of 6 1016 e /cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements. Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation. I-V measurements indicate radiation-induced changes occur in these devices creating increased gate and drain currents. These increased currents are only maintained at low temperatures (T greater than 300 K). It is believed that the increase in gate current is caused by an increase in the electron trap concentration of the AlxGa1-xN layer. This increase in trap concentration directly increases the trap-assisted tunneling current resulting in the observed increase in gate current. The mechanism causing the increase in drain current is unknown. Several theories explaining this increase are presented along with the additional research necessary to illuminate the correct theory. This is the first experiment involving electron radiation of AlxGa1-xN/GaN MODFETs.
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Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors
Published by Creative Media Partners, LLC Okt 2012, 2012
ISBN 10: 1249836565 ISBN 13: 9781249836568
Language: English
£ 69.96
Convert currency£ 11.74 shipping from Germany to United KingdomQuantity: 2 available
Add to basketTaschenbuch. Condition: Neu. Neuware - In this research, the first ever neutron irradiation study of AlGaN/GaN MODFETs was conducted. Devices irradiated to a total 1 MeV Eq (Si) neutron fluence of 1.2x10 16 n/cm2 demonstrated the temperature dependence of irradiation and annealing. Devices irradiated at 80 K exhibited significant persistent electrical degradation at only 5.4 rad (Si), whereas those irradiated at elevated temperatures exhibit transient increases in gate and drain current up to 400 krad (Si). I-V measurements indicate substantial radiation-induced increased gate and drain currents occur only at low-temperature irradiations. The introduction of a high-density of donor defects is hypothesized as the primary cause of both increased values. Irradiating at temperatures gt; 300 K effectively reduces total accumulated dose effects even at 400 krad(Si).
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paperback. Condition: Like New. Like New. book.
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£ 42.35
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£ 82.47
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Add to baskethardcover. Condition: New. In shrink wrap. Looks like an interesting title!
