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Gan Transistor Modeling Power by Chauhan Yogesh (12 results)
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£ 158.08
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GaN Transistor Modeling for RF and Power Electronics (Paperback)
Published by Elsevier Science Publishing Co Inc, 2024
ISBN 10: 0323998712 ISBN 13: 9780323998710
Language: English
Paperback. Condition: new. Paperback. GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results.GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
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£ 174.07
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Gan Transistor Modeling for Rf and Power Electronics : Using the Asm-hemt Model
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
£ 180.80
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£ 179.13
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£ 190.16
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GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model (Woodhead Publishing Series in Electronic and Optical Materials)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
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£ 197.08
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Gan Transistor Modeling for Rf and Power Electronics : Using the Asm-hemt Model
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
£ 216.41
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£ 217.44
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Add to basketCondition: New. Über den AutorYogesh Singh Chauhan is a Professor at the Indian Institute of Technology Kanpur. His research interests include the physics, characterization, and modeling of nanoscale semiconductor devices, and RF circuit design.
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GaN Transistor Modeling for RF and Power Electronics : Using The ASM-HEMT Model
Published by Elsevier Science Publishing Co Inc Mai 2024, 2024
ISBN 10: 0323998712 ISBN 13: 9780323998710
Language: English
£ 305.33
Convert currency£ 11.98 shipping from Germany to United KingdomQuantity: 2 available
Add to basketTaschenbuch. Condition: Neu. Neuware - GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results.
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Paperback. Condition: Brand New. 425 pages. 9.00x6.00x0.43 inches. In Stock. This item is printed on demand.
