Floating Gate Application Memory Devices by Khang Sze (2 results)

(New York, American Telephone and Telegraph Company), 1967. 8vo. Original full green cloth. Volume 46, 1967-2 of "The Bell System Technical Journal". Library stamp to free front end-paper and title-page. Minor bumping to extremities. A nice and clean copy. [Mentioned article:] Pp: 1288-1295. [Entire issue: 837-1658]. First publication of Khang and Sze's seminal and exceedingly influential paper on Floating Gate MOSFET. The technology is today used in flash memory cards. "In 1967, Kahng and Sze reported the first floating-gate structure as a mechanism for nonvolatile information storage. Since then, floating-gate transistors have been used widely to store digital information for long periods in structures such as EPROMs, EEPROMs, and Flash memories." (Hasler, Paul. FLOATING-GATE DEVICES, (1) p.).…

New York, (American Telephone and Telegraph Company), 1967. 8vo. Volume XLVI, July-August, No. 6, 1967 of "The Bell System Technical Journal". In the original printed blue wrappers. A bit of sunning to spine, previous owner's stamp to front wrapper. Otherwise a very nice and clean, internally near mint, copy. Pp. 1288-1295. [Entire issue: Pp. 1055-1300]. First publication of Khang and Sze's seminal and exceedingly influential paper on Floating Gate MOSFET. The technology is today used in flash memory cards."In 1967, Kahng and Sze reported the first floating-gate structure as a mechanism for nonvolatile information storage. Since then, floating-gate transistors have been used widely to store digital information for long periods in structures such as EPROMs, EEPROMs, and Flash memories." (Hasler, Paul. FLOATING-GATE DEVICES, (1) p.).…