Thijs Steven (6 results)

Taschenbuch. Condition: Neu. ESD Protection Challenges | FinFET Technology and RF CMOS Circuits | Steven Thijs (u. a.) | Taschenbuch | 272 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783838336428 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.

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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Two main Electro Static Discharge (ESD) challenges lie ahead. Firstly, FinFET technology has only a limited available silicon volume to dissipate the ESD current. Secondly, as CMOS technology downscaling allows Radio Frequency (RF) applications to operate at higher RF frequencies and wider bandwidths, adequate ESD protection needs to be developed without compromising RF performance. This book, therefore, provides an in-depth analysis on ESD protection structures and concepts, implemented in silicon on insulator FinFET technology. Complex dependencies are found for the different ESD performance parameters on both device geometry and process technology. Further, in this book, novel RF-ESD protection solutions are proposed for both narrow- and wideband RF CMOS circuits in most advanced CMOS technologies, with a special emphasis towards CDM protection. This analysis should provide fundamental understanding of the ESD challenges for FinFET technology and RF CMOS circuits, and should be especially useful to everyone working with ESD in the field of product development, support, research or education. 272 pp. Englisch.

Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Thijs StevenSteven Thijs, PhD: Studied Civil Electrotechnical Engineering at Katholieke Universiteit Leuven. Senior Researcher at imec, Leuven, Belgium. Guido Groeseneken, PhD: Fellow at imec, Leuven, Belgium. Also professor at Kat.

Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Two main Electro Static Discharge (ESD) challenges lie ahead. Firstly, FinFET technology has only a limited available silicon volume to dissipate the ESD current. Secondly, as CMOS technology downscaling allows Radio Frequency (RF) applications to operate at higher RF frequencies and wider bandwidths, adequate ESD protection needs to be developed without compromising RF performance. This book, therefore, provides an in-depth analysis on ESD protection structures and concepts, implemented in silicon on insulator FinFET technology. Complex dependencies are found for the different ESD performance parameters on both device geometry and process technology. Further, in this book, novel RF-ESD protection solutions are proposed for both narrow- and wideband RF CMOS circuits in most advanced CMOS technologies, with a special emphasis towards CDM protection. This analysis should provide fundamental understanding of the ESD challenges for FinFET technology and RF CMOS circuits, and should be especially useful to everyone working with ESD in the field of product development, support, research or education.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 272 pp. Englisch.

Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Two main Electro Static Discharge (ESD) challenges lie ahead. Firstly, FinFET technology has only a limited available silicon volume to dissipate the ESD current. Secondly, as CMOS technology downscaling allows Radio Frequency (RF) applications to operate at higher RF frequencies and wider bandwidths, adequate ESD protection needs to be developed without compromising RF performance. This book, therefore, provides an in-depth analysis on ESD protection structures and concepts, implemented in silicon on insulator FinFET technology. Complex dependencies are found for the different ESD performance parameters on both device geometry and process technology. Further, in this book, novel RF-ESD protection solutions are proposed for both narrow- and wideband RF CMOS circuits in most advanced CMOS technologies, with a special emphasis towards CDM protection. This analysis should provide fundamental understanding of the ESD challenges for FinFET technology and RF CMOS circuits, and should be especially useful to everyone working with ESD in the field of product development, support, research or education.