Language: English
Published by Springer International Publishing AG, Cham, 2016
ISBN 10: 3031009029 ISBN 13: 9783031009020
Seller: Grand Eagle Retail, Bensenville, IL, U.S.A.
Paperback. Condition: new. Paperback. RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAMs potential novel applications beyond the NVM applications. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Language: English
Published by Morgan & Claypool Publishers, 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Seller: Our Kind Of Books, Liphook, United Kingdom
Soft cover. Condition: As New. This book has been in storage since publication and is unread. Hence the description as new .
Paperback. Condition: Brand New. 78 pages. 9.25x7.51x9.25 inches. In Stock.
Seller: Universitätsbuchhandlung Herta Hold GmbH, Berlin, Germany
xi, 269 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.
Seller: Universitätsbuchhandlung Herta Hold GmbH, Berlin, Germany
viii, 245 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.
Seller: Books Puddle, New York, NY, U.S.A.
Condition: New. 1st edition NO-PA16APR2015-KAP.
Condition: As New. Unread book in perfect condition.
PAP. Condition: New. New Book. Shipped from UK. Established seller since 2000.
Condition: New.
Condition: New. First edition Includes bibliographical references and index.
Language: English
Published by Taylor and Francis Ltd, GB, 2025
ISBN 10: 0367687151 ISBN 13: 9780367687151
Seller: Rarewaves.com USA, London, LONDO, United Kingdom
Paperback. Condition: New. This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the book discusses the emerging memory candidates that may have the potential to change the memory hierarchy, and surveys new applications of memory technologies for machine/deep learning applications. This book is intended for graduate students in electrical and computer engineering programs and researchers or industry professionals in semiconductors and microelectronics. Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET Explores the new applications such as in-memory computing for AI hardware acceleration.
Condition: New.
Language: English
Published by Springer International Publishing AG, Cham, 2016
ISBN 10: 3031009029 ISBN 13: 9783031009020
Seller: AussieBookSeller, Truganina, VIC, Australia
Paperback. Condition: new. Paperback. RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAMs potential novel applications beyond the NVM applications. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
Condition: New.
Seller: Ria Christie Collections, Uxbridge, United Kingdom
£ 50.30
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paperback. Condition: New.
Language: English
Published by Taylor & Francis Ltd, 2025
ISBN 10: 0367687151 ISBN 13: 9780367687151
Seller: THE SAINT BOOKSTORE, Southport, United Kingdom
Paperback / softback. Condition: New. New copy - Usually dispatched within 4 working days.
Condition: As New. Unread book in perfect condition.
Seller: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Ireland
Condition: New.
Language: English
Published by Springer International Publishing, 2016
ISBN 10: 3031009029 ISBN 13: 9783031009020
Seller: AHA-BUCH GmbH, Einbeck, Germany
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM's potential novel applications beyond the NVM applications.
Condition: New.
Paperback. Condition: Brand New. 214 pages. 9.18x6.12x9.21 inches. In Stock.
Condition: NEW.
Hardcover. Condition: New.
Condition: New. Shimeng Yu is currently an associate professor of electrical and computer engineering at the Georgia Institute of Technology.This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emph.
Condition: New.
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Condition: New.
Condition: New.
Language: English
Published by Taylor & Francis Group, 2022
ISBN 10: 0367687070 ISBN 13: 9780367687076
Seller: Books Puddle, New York, NY, U.S.A.
Condition: New. pp. 198.