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Instructor's Manual to Accompany Assessment of Children: Cognitive Implications
Language: English
Published by Jerome Sattler, Publisher, Inc. (edition 4th), 2001
ISBN 10: 0961820993 ISBN 13: 9780961820992
Unknown Binding. Condition: Good. 4th. It's a preowned item in good condition and includes all the pages. It may have some general signs of wear and tear, such as markings, highlighting, slight damage to the cover, minimal wear to the binding, etc., but they will not affect the overall reading experience.
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Instructor's Manual to Accompany Assessment of Children: Cognitive Implications
Language: English
Published by Jerome Sattler, Publisher, Inc., 2001
ISBN 10: 0961820993 ISBN 13: 9780961820992
Unknown. Condition: Very Good. No Jacket. May have limited writing in cover pages. Pages are unmarked. ~ ThriftBooks: Read More, Spend Less.
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Instructor's Manual to Accompany Assessment of Children: Cognitive Implications
Language: English
Published by Jerome Sattler, Publisher, Inc. (edition 4th), 2001
ISBN 10: 0961820993 ISBN 13: 9780961820992
Unknown Binding. Condition: Very Good. 4th. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.
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An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors (Paperback or Softback)
Language: English
Published by Biblioscholar 10/26/2012, 2012
ISBN 10: 1286861640 ISBN 13: 9781286861646
Paperback or Softback. Condition: New. An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors. Book.
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An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
£ 15.65
£ 11.98 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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Condition: New. KlappentextrnrnThe effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems. Irradiation is also a valuable tool for analyzing the qua.
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An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors
Language: English
Published by Creative Media Partners, LLC, 2012
ISBN 10: 1286861640 ISBN 13: 9781286861646
PAP. Condition: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors
Language: English
Published by Creative Media Partners, LLC Okt 2012, 2012
ISBN 10: 1286861640 ISBN 13: 9781286861646
Taschenbuch. Condition: Neu. Neuware - The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems. Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation. AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0.45 -1.2 MeV electrons up to doses of 6 1016 e /cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements. Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation. I-V measurements indicate radiation-induced changes occur in these devices creating increased gate and drain currents. These increased currents are only maintained at low temperatures (T greater than 300 K). It is believed that the increase in gate current is caused by an increase in the electron trap concentration of the AlxGa1-xN layer. This increase in trap concentration directly increases the trap-assisted tunneling current resulting in the observed increase in gate current. The mechanism causing the increase in drain current is unknown. Several theories explaining this increase are presented along with the additional research necessary to illuminate the correct theory. This is the first experiment involving electron radiation of AlxGa1-xN/GaN MODFETs.
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An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors
Seller: PBShop.store UK, Fairford, GLOS, United Kingdom
Seller rating 4 out of 5 stars
£ 15.69
£ 4.16 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketPAP. Condition: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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paperback. Condition: Like New. Like New. book.
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Instructor's Manual to Accompany Assessment of Children: Cognitive Implications
Language: English
Published by Jerome Sattler, Publisher, Inc., 2001
ISBN 10: 0961820993 ISBN 13: 9780961820992
Condition: new.
