Giovanni Betti Beneventi

Giovanni Betti Beneventi received the Master degree in Electronics Engineering (cum laude) from University of Modena and Reggio Emilia, Italy, in 2008. Then, he obtained the Ph.D. degree in Electronics and Telecommunications by University of Modena and Reggio Emilia, and the Ph.D. degree in Micro and Nanoelectronics by Grenoble Institut of Technology, France, both in 2011. He is currently research fellow at University of Bologna, Italy.

In the past he held positions in nanotechnology research centers, such as CEA-Leti MINATEC, Grenoble, France, and in the microelectronics industry, such as STMicroelectronics, Numonyx and Micron Technology, Agrate Brianza, Italy.

Since 2007 he has been working on experimental characterization, physical modeling and design by numerical simulation of emerging semiconductor devices, both in the field of non-volatile memories and of advanced transistors for digital applications. He has been mainly involved in studies dealing with transport properties of amorphous semiconductors and with the phase-change behavior of novel chalcogenide materials.

Giovanni Betti Beneventi is a member of the IEEE Electron Device Society and serves as reviewer for leading journal in the field of semiconductor devices, such as IEEE Electon Devices Letters, IEEE Transaction on Electron Devices, Applied Physics Letters, Journal of Applied Physics, and Solid-State Electronics.