Wide-Bandgap Electronic Devices: Symposium Held April 24-27, 2000, San Francisco, California, U.S.A. (Materials Research Society Symposia Proceedings, V. 622.)

R. J. Shul, Fan Ren, Wilfried Pletschen, Masanori Murakami

ISBN 10: 1558995307 / ISBN 13: 9781558995307

Published by Materials Research Society, 2001

About this Item

*Price HAS BEEN REDUCED by 10% until Monday, Oct. 27 (sale item)* 522 pp., Hardcover, previous owner's handstamp to front pastedown, else very good. - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country.

Seller Inventory # ZB615597

Bibliographic Details

• Title: Wide-Bandgap Electronic Devices: Symposium Held April 24-27, 2000, San Francisco, California, U.S.A. (Materials Research Society Symposia Proceedings, V. 622.)
• Publisher: Materials Research Society
• Publication Date: 2001
• Language: English
• ISBN 10: 1558995307
• ISBN 13: 9781558995307
• Binding: Hardcover
• Condition: Very Good

About this title

Synopsis

Interest in wide-bandgap semiconductors for high-power/high-temperature electronics remains prominent. For such applications, SiC is by far the most mature semiconductor material. GaN and diamond, however, have also become prime candidates. While diamond has several advantages over the other two materials, producing large single crystals, as well as the inability to achieve n-type doping, have limited device fabrication. For GaN, recent advances in crystal growth and processing capabilities, as well as excellent transport properties, have yielded a great deal of device development, yet thermal conduction remains an issue. SiC has excellent thermal conductivity, high-breakdown voltages, and well-developed substrates and processing techniques. This book deals with a wide range of technical activity in the area of wide-bandgap high-power/high-temperature electronic devices and covers topics including the fabrication and performance of GaN-based and SiC-based devices, as well as issues related to growth, characterization, and processing of wide-bandgap materials. Several summaries of the current status of the field are provided.