Variation-Aware Advanced CMOS Devices and SRAM

Language: English

Published by Springer, 2016

9401775958 / 9789401775953

Series: Book 60 of 72 - Springer Series in Advanced Microelectronics

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Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH

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Druck auf Anfrage Neuware - Printed after ordering - This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development.This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.…

Seller Inventory # 9789401775953

Title
Variation-Aware Advanced CMOS Devices and SRAM
Author
Changhwan Shin
Publisher
Springer
Publication year
2016
Condition
Neu
Binding
Buch
Language
English
ISBN 10
9401775958
ISBN 13
9789401775953
Item weight
370 grams
Dimensions
241x160x14 mm
Series
Book 60 of 72: Springer Series in Advanced Microelectronics

AHA-BUCH GmbH

Einbeck, Germany

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AbeBooks seller since August 14, 2006

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