UDSM CMOS Circuits

Language: English

Published by LAP LAMBERT Academic Publishing Feb 2014, 2014

3659523038 / 9783659523038

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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.

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This item is printed on demand - it takes 3-4 days longer - Neuware -A simple and accurate delay model is proposed for Ultra Deep Sub-micron CMOS circuits (CMOS Inverter, NAND2, NOR2 etc) based on nth power law when the channel length is less than the 90nm. All the parameters are taken from BSIM.4.6.1 manual. This work derives analytical expression for the delay model of a CMOS inverter including all sorts of secondary effects i.e. Body Bias effect, Channel Length Modulation Effect (CLM), Velocity Saturation effect, Drain Induced Barrier Lowering (DIBL), Gate Induced Drain Leakage (GIDL), Substrate Current Induced Body Effect (SCBE), Drain-Induced Threshold Shift (DITS), which may occur in the Ultra Deep Submicron MOS devices. We also extend our delay model for 2 inputs CMOS NAND & NOR gates. Our result is better than simulation result with respect to both quality and estimation time. This work also thoroughly described the delay dependence on different parameters such as channel length, Load Capacitance, Supply voltage, Transition time, Velocity Saturation Coefficient, Threshold Voltage, Load Resistance, Width variation etc. This also explained the different power models for the estimation of UDSM circuts. 96 pp. Englisch.…

Seller Inventory # 9783659523038

Title
UDSM CMOS Circuits
Author
Jagannath Samanta
Publisher
LAP LAMBERT Academic Publishing Feb 2014
Publication year
2014
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
3659523038
ISBN 13
9783659523038
Item weight
161 grams
Dimensions
220x150x6 mm

BuchWeltWeit Ludwig Meier e.K.

Bergisch Gladbach, Germany

5-star seller

AbeBooks seller since January 11, 2012

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BuchWeltWeit Ludwig Meier e.K.

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