Ti-Based Schottky Contacts to n-InP: Electronic Device Applications

Language: English

Published by LAP LAMBERT Academic Publishing Apr 2018, 2018

6139814928 / 9786139814923

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This item is printed on demand - Print on Demand Titel. Neuware -In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 148 pp. Englisch. …

Title
Ti-Based Schottky Contacts to n-InP: Electronic Device Applications
Author
Varra Rajagopal Reddy
Publisher
LAP LAMBERT Academic Publishing Apr 2018
Publication year
2018
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
6139814928
ISBN 13
9786139814923
Item weight
238 grams
Dimensions
220x150x10 mm

buchversandmimpf2000

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