Theoretical Study of Electrical Properties of n-type GaN

Language: English

Published by LAP LAMBERT Academic Publishing Mai 2018, 2018

6139834945 / 9786139834945

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This item is printed on demand - Print on Demand Titel. Neuware -In this book, A theoretical model of energy loss mechanism as a function of electron temperature and electron concentration has been given for n-type GaN structures. The energy relaxation rates and mobility for warm and hot electrons have been calculated for over the electron temperature(T) range of 1.5 to 500 K at lattice temperature T0=1.5 K. It has been found that the acoustic phonon scattering due to deformation potential and piezoelectric coupling are the dominant scattering mechanisms at low electron temperatures (Te100 K, the polar optic phonon scattering becomes the effective scattering mechanism. The optic phonon energy of GaN was obtained as 91.8 meV and the PO phonon emission time as 8.6 fs. Also, the drift velocity of electrons as function of electron temperature and electric field has been obtained. The theoretical results are compared with available experimental results and a good agreement is observed.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 76 pp. Englisch.

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Title
Theoretical Study of Electrical Properties of n-type GaN
Author
Arindam Biswas
Publisher
LAP LAMBERT Academic Publishing Mai 2018
Publication year
2018
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
6139834945
ISBN 13
9786139834945
Item weight
131 grams
Dimensions
220x150x5 mm

buchversandmimpf2000

Emtmannsberg, BAYE, Germany

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