Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors
Uhlman, Troy A
ISBN 10: 1249836565 ISBN 13: 9781249836568
Published by Biblioscholar, 2012
New
Soft cover
From
Lucky's Textbooks, Dallas, TX, U.S.A.
Seller rating 5 out of 5 stars
AbeBooks Seller since 22 July 2022
This specific item is no longer available.
About this Item
Description:
Seller Inventory # ABLIING23Mar2411530018996
Synopsis:
In this research, the first ever neutron irradiation study of AlGaN/GaN MODFETs was conducted. Devices irradiated to a total 1 MeV Eq (Si) neutron fluence of 1.2x10 16 n/cm2 demonstrated the temperature dependence of irradiation and annealing. Devices irradiated at 80 K exhibited significant persistent electrical degradation at only 5.4 rad (Si), whereas those irradiated at elevated temperatures exhibit transient increases in gate and drain current up to 400 krad (Si). I-V measurements indicate substantial radiation-induced increased gate and drain currents occur only at low-temperature irradiations. The introduction of a high-density of donor defects is hypothesized as the primary cause of both increased values. Irradiating at temperatures gt; 300 K effectively reduces total accumulated dose effects even at 400 krad(Si).
"About this title" may belong to another edition of this title.
Bibliographic Details
Title: Temperature Dependent Current-Voltage ...
Publisher: Biblioscholar
Publication Date: 2012
Binding: Soft cover
Condition: New