Subthreshold Modeling of Submicron MOSFETs

Language: English

Published by LAP LAMBERT Academic Publishing Okt 2011, 2011

3846522090 / 9783846522097

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This item is printed on demand - Print on Demand Titel. Neuware -Nanotechnology deals with the creation and utilization of materials, devices and systems on the nanometer-length scale. Higher speed can be achieved with a smaller device size. This rapid rate of feature size downscaling would lead to a significant short channel effects limitations. DMG MOSFET has been proposed as potential candidate to combat SCEs. Moreover, the design of both digital and analog systems in which the devices are operated in the subthreshold regime has evinced a lot of interest due to the tremendous market demand for extremely low power applications It is highly important to understand the device physics and development of corresponding accurate device model of subthreshold performances for application of MOSFET in the integrated circuit simulation and design in parallel to the process technology advancement. At present, there is a general consensus that the surface potential based modeling approach preserves device physics to describe the device operation with high accuracy. This book is designed to serve as a reference book for subthreshold surface-potential based short channel MOSFET device modeling using TCAD tools.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 104 pp. Englisch.…

Seller Inventory # 9783846522097

Title
Subthreshold Modeling of Submicron MOSFETs
Author
Angsuman Sarkar
Publisher
LAP LAMBERT Academic Publishing Okt 2011
Publication year
2011
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
3846522090
ISBN 13
9783846522097
Item weight
173 grams
Dimensions
220x150x7 mm

buchversandmimpf2000

Emtmannsberg, BAYE, Germany

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