Simulation of Semiconductor Processes and Devices
. Ed(s): Grasser, Tibor (Technical University of Vienna, Austria); Selberherr, Siegfried
ISBN 10: 3211728600 ISBN 13: 9783211728604
Published by Springer Verlag GmbH, 2007
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Soft cover
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Contains the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Austria. This volume provides a forum for the presentation of developments in the theoretical description and numerical simulation of semiconductor fabrication processes. Editor(s): Grasser, Tibor (Technical University of Vienna, Austria); Selberherr, Siegfried. Num Pages: 463 pages, biography. BIC Classification: TJFD5. Category: (UP) Postgraduate, Research & Scholarly. Dimension: 244 x 170 x 24. Weight in Grams: 759. . 2007. Paperback. . . . . Books ship from the US and Ireland. Seller Inventory # V9783211728604
Synopsis:
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
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Bibliographic Details
Title: Simulation of Semiconductor Processes and ...
Publisher: Springer Verlag GmbH
Publication Date: 2007
Binding: Soft cover
Condition: New
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Simulation of Semiconductor Processes and Devices 2007 : SISPAD 2007
Seller: Buchpark, Trebbin, Germany
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Condition: Sehr gut. Zustand: Sehr gut | Seiten: 480 | Sprache: Englisch | Produktart: Bücher | The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites. Seller Inventory # 3662543/12
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Simulation of Semiconductor Processes and Devices 2007 : SISPAD 2007
Seller: Buchpark, Trebbin, Germany
Seller rating 5 out of 5 stars
Condition: Sehr gut. Zustand: Sehr gut | Seiten: 480 | Sprache: Englisch | Produktart: Bücher | The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites. Seller Inventory # 3662543/2
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Simulation Of Semiconductor Processes And Devices 2007
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Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007
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Brand new book. Fast ship. Please provide full street address as we are not able to ship to P O box address. Seller Inventory # SHAK236441