Silicon Carbide: Materials, Processing and Devices

Feng, Zhe Chuan (Editor)/ Zhao, Jian H. (Editor)

ISBN 10: 1591690234 / ISBN 13: 9781591690238

Published by Routledge, 2003

About this Item

1st edition. 416 pages. 9.00x6.25x1.00 inches. In Stock.

Seller Inventory # x-1591690234

Bibliographic Details

• Title: Silicon Carbide: Materials, Processing and Devices
• Publisher: Routledge
• Publication Date: 2003
• Language: English
• ISBN 10: 1591690234
• ISBN 13: 9781591690238
• Binding: Hardcover
• Condition: Brand New
• Weight: 0.93 kilograms

About this title

Synopsis

This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.

About the Author

Dr. Zhe Chuan Feng received his Ph.D. from the University of Pittsburgh. He has worked both within academia and industry on semiconductor growth, process, characterization, semiconductor devices, and lasers. He is currently a Senior Research Scientist at the School of Electrical & Computer Engineering at the Georgia Institute of Technology, focusing on widegap III-Nitrides, SiC and other compound semiconductors.
Dr. Jian H. Zhao received his Ph.D. in Electrical Engineering from Carnegie Mellon University in 1988 and joined Rutgers University in the same year. He is Professor and Director of SiCLAB and his research results have been summarized in more than 110 refereed papers and over 140 conference papers and presentations, as well as four book chapters and a book titled Optical Filter Design and Analysis: A Signal Processing Approach. He holds five patents.