SiC Power Module Design

Language: English

Published by Institution of Engineering and Technology, GB, 2022

1785619071 / 9781785619076

Series: Book 64 of 65 - Energy Engineering

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High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging. This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs. Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.

Seller Inventory # LU-9781785619076

Title
SiC Power Module Design
Author
Castellazzi, Alberto
Publisher
Institution of Engineering and Technology, GB
Publication year
2022
Condition
New
Binding
Hardback
Language
English
ISBN 10
1785619071
ISBN 13
9781785619076
Series
Book 64 of 65: Energy Engineering

Rarewaves.com UK

London, United Kingdom

5-star seller

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