Resistive Random Access Memory (RRAM)

Language: English

Published by Springer, Palgrave Macmillan Mär 2016, 2016

3031009029 / 9783031009020

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This item is printed on demand - Print on Demand Titel. Neuware -RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM¿s potential novel applications beyond the NVM applications.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 80 pp. Englisch.

Seller Inventory # 9783031009020

Title
Resistive Random Access Memory (RRAM)
Author
Shimeng Yu
Publisher
Springer, Palgrave Macmillan Mär 2016
Publication year
2016
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
3031009029
ISBN 13
9783031009020
Item weight
169 grams
Dimensions
235x191x5 mm

buchversandmimpf2000

Emtmannsberg, BAYE, Germany

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