Resistive Random Access Memory

Language: English

Published by LAP LAMBERT Academic Publishing Apr 2012, 2012

3848488329 / 9783848488322

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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.

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Softcover

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This item is printed on demand - it takes 3-4 days longer - Neuware -Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conductive ON or Low Resistive State (LRS) and a less conductive OFF or High Resistive State (HRS). In this experimental study Sol-gel derived Titanium Dioxide (TiO2) is considered as the ion conducting insulating dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag) Metal-Insulator-Metal structure for RRAM devices have been designed and fabricated and studied in this book. Different analytical models and explanations to establish the mechanism behind the Transition metal oxide based RRAM device and Resistive Switching phenomenon are the addition features of this book. 96 pp. Englisch.…

Seller Inventory # 9783848488322

Title
Resistive Random Access Memory
Author
Arnab Hazra
Publisher
LAP LAMBERT Academic Publishing Apr 2012
Publication year
2012
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
3848488329
ISBN 13
9783848488322
Item weight
161 grams
Dimensions
220x150x6 mm

BuchWeltWeit Ludwig Meier e.K.

Bergisch Gladbach, Germany

5-star seller

AbeBooks seller since January 11, 2012

Shipping rates from Germany to U.S.A.

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BuchWeltWeit Ludwig Meier e.K.

Germany