Reliability Issues in Ultra-Scaled Flash Memories

Language: English

Published by VDM Verlag Dr. Müller, 2010

3639293614 / 9783639293616

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nach der Bestellung gedruckt Neuware - Printed after ordering - The constant improvements in the silicon technology have resulted in a continuous reduction of the electron devices feature size. These technological developments strongly impact in device performance. One of the most important reliability issues in the last technological nodes is the Random Telegraph Noise (RTN). This is phenomenon affects the threshold voltage (VT) of the memory cell. A physics-based statistical model is presented and validated. Beyond the 60nm technology node, the granularity of the charge stored in the device is not more negligible and this fact influences the accuracy to perform the program operation. The statistical nature of the electrons injection into the floating gate spreads the VT distribution of the array cells. The feature size reduction affects negatively the distribution and it becomes more and more difficult to control the cell VT by the program algorithm. Another issue in sub-100nm technologies concerns the cell-to-cell interference. The VT loss displays a dependence on the program pattern of the adjacent cells. All these phenomena contribute all together to corrupt the data stored, causing the memory failure and thus the worn-out.

Seller Inventory # 9783639293616

Title
Reliability Issues in Ultra-Scaled Flash Memories
Author
Michele Ghidotti
Publisher
VDM Verlag Dr. Müller
Publication year
2010
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
3639293614
ISBN 13
9783639293616
Item weight
255 grams
Dimensions
220x150x9 mm

AHA-BUCH GmbH

Einbeck, Germany

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