Paperback. This book studies the electrical, optical and structural properties of the Be-oped GaInas/AlGaAs multiple quantum-well structures (MQWs) at different doping density in the GaInls well, both designed and fabricated in house. The higher Be-doping density in the wells was found to enhance the compressive strain and increase barrier height of the GaInAs/AlGaAs MQWs through extensive optical characterisation. It caused the shifts of the sub-energy levels in the valence band of the well material and the absorption wavelength resulting from the intersubband absorption. These observations were verified by theoretical calculation based on the six-band Luttinger-Kohn model by taking the Be-doping into account. Studies the electrical, optical and structural properties of the Be-oped GaInas/AlGaAs multiple quantum-well structures (MQWs) at different doping density in the GaInls well, both designed and fabricated in house. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

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Bibliographic Details

Title: Quantum Well Structures for Infrared Photodetection (Paperback)
Publisher: Nova Science Publishers Inc, New York
Publication Date: 2011
Language: English
ISBN 10: 1616683686
ISBN 13: 9781616683689
Binding: Paperback
Condition: new

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This book studies the electrical, optical and structural properties of the Be-oped GaInas/AlGaAs multiple quantum-well structures (MQWs) at different doping density in the GaInls well, both designed and fabricated in house. The higher Be-doping density in the wells was found to enhance the compressive strain and increase barrier height of the GaInAs/AlGaAs MQWs through extensive optical characterisation. It caused the shifts of the sub-energy levels in the valence band of the well material and the absorption wavelength resulting from the intersubband absorption. These observations were verified by theoretical calculation based on the six-band Luttinger-Kohn model by taking the Be-doping into account.

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