Quantum Well Structures for Infrared Photodetection (Lasers and Electro-Optics Research and Technology)
By Wei Shi (Author), D H Zhang (Author),
ISBN 10: 1616683686 ISBN 13: 9781616683689
Published by Nova Science Pub Inc, 2011
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This book studies the electrical, optical and structural properties of the Be-oped GaInas/AlGaAs multiple quantum-well structures (MQWs) at different doping density in the GaInls well, both designed and fabricated in house. The higher Be-doping density in the wells was found to enhance the compressive strain and increase barrier height of the GaInAs/AlGaAs MQWs through extensive optical characterisation. It caused the shifts of the sub-energy levels in the valence band of the well material and the absorption wavelength resulting from the intersubband absorption. These observations were verified by theoretical calculation based on the six-band Luttinger-Kohn model by taking the Be-doping into account.
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Title: Quantum Well Structures for Infrared ...
Publisher: Nova Science Pub Inc
Publication Date: 2011
Binding: Soft cover
Condition: Brand New
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Quantum Well Structures for Infrared Photodetection
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Quantum Well Structures for Infrared Photodetection
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Kartoniert / Broschiert. Condition: New. Studies the electrical, optical and structural properties of the Be-oped GaInas/AlGaAs multiple quantum-well structures (MQWs) at different doping density in the GaInls well, both designed and fabricated in house.KlappentextrnrnThis book stu. Seller Inventory # 596430492
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Quantum Well Structures for Infrared Photodetection
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Quantum Well Structures for Infrared Photodetection (Paperback)
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ISBN 13: 9781616683689
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Paperback. Condition: new. Paperback. This book studies the electrical, optical and structural properties of the Be-oped GaInas/AlGaAs multiple quantum-well structures (MQWs) at different doping density in the GaInls well, both designed and fabricated in house. The higher Be-doping density in the wells was found to enhance the compressive strain and increase barrier height of the GaInAs/AlGaAs MQWs through extensive optical characterisation. It caused the shifts of the sub-energy levels in the valence band of the well material and the absorption wavelength resulting from the intersubband absorption. These observations were verified by theoretical calculation based on the six-band Luttinger-Kohn model by taking the Be-doping into account. Studies the electrical, optical and structural properties of the Be-oped GaInas/AlGaAs multiple quantum-well structures (MQWs) at different doping density in the GaInls well, both designed and fabricated in house. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. Seller Inventory # 9781616683689
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