Photo-induced Defects in Semiconductors

Language: English

Published by Cambridge University Press, 1996

0521461960 / 9780521461962

Series: Book 2 of 2 - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering

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Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH

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Druck auf Anfrage Neuware - Printed after ordering - This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III-V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

Seller Inventory # 9780521461962

Title
Photo-induced Defects in Semiconductors
Author
David Redfield
Publisher
Cambridge University Press
Publication year
1996
Condition
Neu
Binding
Buch
Language
English
ISBN 10
0521461960
ISBN 13
9780521461962
Item weight
530 grams
Dimensions
235x157x18 mm
Series
Book 2 of 2: Cambridge Studies in Semiconductor Physics and Microelectronic Engineering

AHA-BUCH GmbH

Einbeck, Germany

5-star seller

AbeBooks seller since August 14, 2006

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