Performance Analysis of InP Based Hemt Devices in Nano Regime

Language: English

Published by LAP LAMBERT Academic Publishing Jan 2020, 2020

6200549982 / 9786200549983

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This item is printed on demand - Print on Demand Titel. Neuware -In silicon CMOS technology, scaling inhibits the device performance to a wide extent due to increased power dissipation and short channel effects. Therefore the need for alternative material and technology has become predominant for future devices in the nanometer regime. As the device scaling continues to the sub 20 nm regime, III-V compound semiconductors based High Electron Mobility Transistors (HEMTs) have become promising candidates replacing Si-based devices for future VLSI applications. Also, these III-V compound HEMT have dominated the market with superior performance in terms of high reliability compared to other devices such as silicon nanowires and carbon nanotubes. III-V materials such as InGaAs, InAlAs, and InAs based HEMTs are favorable devices for THz range frequency applications. The choice of a proper channel material (InGaAs sub-channel / InAs composite channel) and optimization of channel thickness (TCH), Barrier thickness(TB) and a gate length (Lg) in HEMT structure create low crystal related lattice defects, improved mobility, high DC, and analog / RF performances.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 108 pp. Englisch.…

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Title
Performance Analysis of InP Based Hemt Devices in Nano Regime
Author
Saravana Kumar R.
Publisher
LAP LAMBERT Academic Publishing Jan 2020
Publication year
2020
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
6200549982
ISBN 13
9786200549983
Item weight
179 grams
Dimensions
220x150x8 mm

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