Oxide Nanoelectronics
ISBN 10: 1605112690 ISBN 13: 9781605112695
Published by Cambridge University Press, 2011
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Hardcover
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Synopsis:
Symposium K, 'Oxide Nanoelectronics', was held November 29–December 3 at the 2010 MRS Fall Meeting in Boston, Massachusetts. The field of oxide nanoelectronics has grown tremendously in the last decade. Many striking empirical observations in a variety of oxide materials show great promise for ultrahigh-density storage, passive and active nanodevice creation, and functionality based on multiple properties (e.g., magnetic and ferroelectric). The prospect for band-device engineering in oxide heterostructures is comparable to what took place for III-V semiconductors roughly 30 years ago. The symposium that this volume is based on brought together researchers working in this new field to lay a materials-based foundation that can pave the way for major industrial use of these high-performance nanoelectronic systems. The presented topics included: the growth of new oxide materials and heterostructures using pulsed-laser deposition and molecular beam epitaxy; integration of oxides with silicon substrates; characterization of novel electronic and correlated-electron properties in oxide thin films and superlattices; nanoscale control of phase transitions and correlated properties; theory of oxide nanostructures; mixed ion-electronic conduction; magnetism; and oxide 2DEGs.
Book Description: Symposium K, 'Oxide Nanoelectronics', was held November 29–December 3 at the 2010 MRS Fall Meeting in Boston, Massachusetts. The field of oxide nanoelectronics has grown in the last decade. The symposium that this volume is based on brought together researchers working in this new field to lay a materials-based foundation that can pave the way for major industrial use of these high-performance nanoelectronic systems.
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Bibliographic Details
Title: Oxide Nanoelectronics
Publisher: Cambridge University Press
Publication Date: 2011
Binding: Hardcover
Condition: New