Nitrogen Containing III-V Semiconductor Surfaces and Nanostructures

Language: English

Published by Südwestdeutscher Verlag Für Hochschulschriften Okt 2009, 2009

3838111834 / 9783838111834

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This item is printed on demand - Print on Demand Titel. Neuware -Different nitrogen containing III-V semiconductor surfaces and nanostructures are studied using scanning tunneling microscopy and spectroscopy. In diluted GaAsN layers single nitrogen atoms can be identified. The measured density of states shows that nitrogen impurities lead to a splitting of the GaAs conduction band. The incorporation of nitrogen with a nominal concentration of 9% into InAs/GaAs QDs leads to a strong dissolution and the formation of extended spherical nitrogen-free InGaAs QDs with a low indium content. Furthermore, for the GaN(1-100) cleavage surface of epitaxially grown GaN substrates it is found that both the nitrogen and gallium derived intrinsic dangling bond surface states are outside of the fundamental bulk band gap. The observed Fermi level pinning at 1.0 eV below the conduction band edge is attributed to the high step density, but not to intrinsic surface states. In GaN wafers dislocations are found to form localized bunches of entangled nonparallel dislocation lines. The charge and the Burgers vector of these dislocations are identified. Finally, an epitaxially grown silicon doping modulation structure is imaged.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 144 pp. Englisch.…

Seller Inventory # 9783838111834

Title
Nitrogen Containing III-V Semiconductor Surfaces and Nanostructures
Author
Lena Ivanova
Publisher
Südwestdeutscher Verlag Für Hochschulschriften Okt 2009
Publication year
2009
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
3838111834
ISBN 13
9783838111834
Item weight
233 grams
Dimensions
220x150x10 mm

buchversandmimpf2000

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