New Developments in Semiconductor Physics

Language: English

Published by Springer, Springer Berlin Heidelberg Mai 1980, 1980

3540099883 / 9783540099888

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This item is printed on demand - Print on Demand Titel. Neuware -Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors.- Optically detected magnetic resonance studies of semiconductors.- Deep level spectroscopy in semicounductors by optical excitation.- Depleted layer spectroscopy.- Luminescence of chromium in gallium arsenide.- Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K.- Properties of an extended defect in GaAs.62P.38.- Large defect-lattice relaxation phenomena in solids.- Temperature dependent decay of a metastable state of systems with large impurity-lattice relaxation (CdF2 : In).- Electron-phonon interaction: Polaron transport.- Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb.- Photoluminescence in amorphous semiconductors.- Man-made semiconductor superlattices.- The localized states of interfaces and their physical models.- Cyclic cluster model (CCM) in the CNDO approximation for deep levels in covalent solids.- Is there a minimum linewidth in integrated circuits .Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 292 pp. Englisch.

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Bibliographic details

Title
New Developments in Semiconductor Physics
Author
F. Beleznay
Publisher
Springer, Springer Berlin Heidelberg Mai 1980
Publication year
1980
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
3540099883
ISBN 13
9783540099888
Item weight
508 grams
Dimensions
244x170x16 mm

buchversandmimpf2000

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