Modeling and Characterization of RF and Microwave Power FETs

Language: English

Published by Cambridge University Press, GB, 2011

0521336171 / 9780521336178

Series: Book 1 of 20 - Cambridge RF and Microwave Engineering

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Seller: Rarewaves.com USA, London, London, United KingdomRarewaves.com USA

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This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Seller Inventory # LU-9780521336178

Title
Modeling and Characterization of RF and Microwave Power FETs
Author
Peter Aaen, Jaime A. Plá, John Wood
Publisher
Cambridge University Press, GB
Publication year
2011
Condition
New
Binding
Paperback
Language
English
ISBN 10
0521336171
ISBN 13
9780521336178
Item weight
610 grams
Series
Book 1 of 20: Cambridge RF and Microwave Engineering

Rarewaves.com USA

London, London, United Kingdom

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AbeBooks seller since June 11, 2025

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