Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Aaen, Peter; Plá, Jaime A.; Wood, John
ISBN 10: 0521336171 ISBN 13: 9780521336178
Published by Cambridge University Press, 2011
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This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Review: Review of the hardback: '... a well-written and useful text ... a coherent review of the advanced state of power FET modelling and characterisation.' IEEE Microwave Magazine
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Title: Modeling and Characterization of RF and ...
Publisher: Cambridge University Press
Publication Date: 2011
Binding: Soft cover
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Published by
Cambridge University Press, 2011
ISBN 10: 0521336171
ISBN 13: 9780521336178
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Modeling and Characterization of RF and Microwave Power FETs (Paperback)
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ISBN 10: 0521336171
ISBN 13: 9780521336178
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Paperback. Condition: new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Seller Inventory # 9780521336178
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Modeling and Characterization of Rf and Microwave Power Fets
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ISBN 10: 0521336171
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Modeling and Characterization of RF and Microwave Power FETs (Paperback)
Published by
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ISBN 10: 0521336171
ISBN 13: 9780521336178
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Paperback. Condition: new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. Seller Inventory # 9780521336178