Materials Fundamentals of Gate Dielectrics

Alexandra Navrotsky

ISBN 10: 9048167868 / ISBN 13: 9789048167869

Published by Springer Netherlands, Springer Netherlands Feb 2011, 2011

About this Item

Neuware -According to Bernie Meyerson, IBM¿s chief technology of cer, the traditional sc- ing of semiconductor manufacturing processes died somewhere between the 1- and 90-nanometer nodes. One of the prime reasons is the low dielectric constant of SiO ¿ thechoice dielectricof all modern electronics. This book presents materials 2 fundamentals of the novel gate dielectrics that are being introduced into semic- ductor manufacturing to ensure the Moore¿s law scaling of CMOS devices. This is a very rapidly evolving eld of research and we try to focus on the basicundersta- ing of structure, thermodynamics, and electronic properties of these materials that determine their performance in the device applications. Thevolume was conceivedin 2001 afteraSymposium on Alternative Gate - electrics we had at the American Physical Society March Meeting in Seattle, upon the suggestion of the Kluwer editor Sabine Freisem. After several discussions we decided that such a bookindeed would be useful as long as we could focus on the fundamental side of the problem and keep the level of the discussion accessible to graduate students andavariety of professionals from different elds. The problem of nding a replacement for SiO asa gate dielectric bringstogether inaunique way 2 many fundamental disciplines. At the same time this problem is truly applied and practical. It looked unlikelythat the perfect new material would be foundfast; rather there would be a series of evolving candidate materialsand approaches.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 484 pp. Englisch.

Seller Inventory # 9789048167869

Bibliographic Details

• Title: Materials Fundamentals of Gate Dielectrics
• Publisher: Springer Netherlands, Springer Netherlands Feb 2011
• Publication Date: 2011
• Language: English
• ISBN 10: 9048167868
• ISBN 13: 9789048167869
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 240W x 160H x 27D millimeters 240 millimeters width by 160 millimeters height by 27 millimeters depth
• Weight: 766 grams

About this title

Synopsis

Materials Fundamentals of Dielectric Gates treats materials fundamentals of the novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of the CMOS devices. This is a very fast evolving field of research so the focus is materials, mostly transition metal oxide, that determine performance in device applications. The complexity of the structure-property relations in TM oxides makes the use of the state-of-the-art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-rayphotoelectron spectroscopy. Since many of the problems encountered in the world of CMOS are also relevant for other semiconductors such as GaAs, a comprehensive review of recent developments in this field is thus also given

About the Author

Alexander Demkov received his Ph.D. in Physics at Arizona State University in 1995 secializing in electronic structure theory. His postdoctoral research was focused on electronic properties of zeolites. Het joined Motorola R&D in 1997, and has been working on materials problems of advanced CMOS gate stack, and quantum transport. He has authored over 60 papers, and has two issued patents. He has organized several national and international meetings, serves as an associate editor ofg the Journal of Vacuum Science and Technology, and is a member of the ITRS working group on Emerging Research Materials. He is adjunct professor of Physics at Arizona State University.

 

Alexandra Navrotsky was educated at the Bronx High School of Science and the University of Chicago (B.S., M.S., and Ph.D. in physical chemistry). After postdoctoral work in Germany and at Penn State University, she joined the faculty in Chemistry at Arizona State University, where she remained till her move to the Department of Geological and Geophysical Sciences at Princeton University in 1985. She chaired that department from 1988 to 1991 and has been active in the Princeton Materials Institute. On July 1, 1997, she became an interdisciplinary professor of Ceramic, Earth and Environmental Materials Chemistry at the University of California  at Davis and is now Edward Roessler Chair in Mathematical and Physical Sciences. She directs the NEAT (Nanomaterials in the Environment, Agriculture and Technology) activities at Davis, including a faculty hiring initiative, an NSF-IGERT, and a new Organized Research Unit.