MODELING AND ELECTROTHERMAL SIMULATION OF SIC POWER DEVICES: USING SILVACO© ATLAS TCAD

Language: English

Published by World Scientific Publishing Co Pte Ltd, SG, 2019

9813237821 / 9789813237827

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The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.Related Link(s).

Seller Inventory # LU-9789813237827

Title
MODELING AND ELECTROTHERMAL SIMULATION OF SIC POWER DEVICES: USING SILVACO© ATLAS TCAD
Author
Stephen B Bayne, Bejoy N Pushpakaran
Publisher
World Scientific Publishing Co Pte Ltd, SG
Publication year
2019
Condition
New
Binding
Hardback
Language
English
ISBN 10
9813237821
ISBN 13
9789813237827

Rarewaves.com UK

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